| Presentation | 2006-10-05 RF characteristics of AlGaN/GaN-HEMTs on Si substrates Hideyuki OKITA, Juro MITA, Yoshiaki SANO, Toshiharu MARUI, Masanori ITO, Shinichi HOSHI, Fumihiko TODA, Shohei SEKI, Takashi EGAWA, |
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| Abstract(in Japanese) | (See Japanese page) | ||
| Abstract(in English) | AlGaN/GaN-HEMTs (High Electron Mobility Transistors) on Silicon substrate, with recessed ohmic and recessed gate electrodes were fabricated. By optimizing ohmic and gate recess depth, we obtained a superior maximum extrinsic trans-conductance (g_| ) by gate recessing, stepper exposure technique with fine alignment accuracy was used to fabricate AlGaN/GaN-HEMT on 3 inches Si substrate. To minimize difference of wafers, we made gate recessed part in the half, and non-gate recessed part in the other half, in the same wafer. As a result, we found that, the standard deviation of V_ | , in recessed and non-recessed part, was 43mV and 75mV respectively, which were very small. We also fabricated HEMTs with gate length of 0.7μm, with gate width of 840μm(420μm×2). From the load-pull power measurement at 2.14GHz, Vds of 50V bias, saturated output power (P_ | |
| Keyword(in Japanese) | (See Japanese page) | ||
| Keyword(in English) | AlGaN/GaN-HEMT / Si substrate / recessed ohmic / recessed gate / RF characteristics / Uniformity | ||
| Paper # | ED2006-154,CPM2006-91,LQE2006-58 | ||
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | RF characteristics of AlGaN/GaN-HEMTs on Si substrates |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN-HEMT |
| Keyword(2) | Si substrate |
| Keyword(3) | recessed ohmic |
| Keyword(4) | recessed gate |
| Keyword(5) | RF characteristics |
| Keyword(6) | Uniformity |
| 1st Author's Name | Hideyuki OKITA |
| 1st Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | Juro MITA |
| 2nd Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | Yoshiaki SANO |
| 3rd Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Toshiharu MARUI |
| 4th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 5th Author's Name | Masanori ITO |
| 5th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 6th Author's Name | Shinichi HOSHI |
| 6th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 7th Author's Name | Fumihiko TODA |
| 7th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 8th Author's Name | Shohei SEKI |
| 8th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 9th Author's Name | Takashi EGAWA |
| 9th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2006-10-05 |
| Paper # | ED2006-154,CPM2006-91,LQE2006-58 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |