| Presentation | 2006-10-05 Improvement of Breakdown Voltage of AlGaN/GaN HEMT Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegassi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and high breakdown characteristics. But it is difficult to increase breakdown voltage because of large leakage current originated from the heteroepitaxial layer interface. To solve the issue, we have developed AlGaN/GaN HEMTs with Fe doped GaN buffer on Sapphire substrate. Fe doped GaN buffer suppress buffer leakage efficiently. We obtained the HEMT with the on-state resistance of 3.7 mΩcm^2 and the breakdown voltage of 940V. In the HEMT on Si substrate, leakage comes from vertical current flow through substrate. It is important to increase the epitaxial layer thickness for increase breakdown voltage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / HEMT / power switching device / low specific on-state resistance / high breakdown voltage / Fe doping / Substrate |
| Paper # | ED2006-153,CPM2006-90,LQE2006-57 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of Breakdown Voltage of AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | HEMT |
| Keyword(4) | power switching device |
| Keyword(5) | low specific on-state resistance |
| Keyword(6) | high breakdown voltage |
| Keyword(7) | Fe doping |
| Keyword(8) | Substrate |
| 1st Author's Name | Ken Nakata |
| 1st Author's Affiliation | Eudyna Devices Inc.() |
| 2nd Author's Name | Takeshi Kawasaki |
| 2nd Author's Affiliation | Eudyna Devices Inc. |
| 3rd Author's Name | Keita Matsuda |
| 3rd Author's Affiliation | Eudyna Devices Inc. |
| 4th Author's Name | Takeshi Igarashi |
| 4th Author's Affiliation | Eudyna Devices Inc. |
| 5th Author's Name | Seiji Yaegassi |
| 5th Author's Affiliation | Eudyna Devices Inc. |
| Date | 2006-10-05 |
| Paper # | ED2006-153,CPM2006-90,LQE2006-57 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |