| Presentation | 2006/9/28 Electrical Characteristics and Interface Structure of Ultra-thin Si_3N_4 films on Si(100) and Si(110) Takashi ARATANI, Masaaki HIGUCHI, Tatsufumi HAMADA, Akinobu TERAMOTO, Takeo HATTORI, Shigetoshi SUGAWA, Tadahiro OHMI, Seiji SHINAGAWA, Hiroshi NOHIRA, Eiji IKENAGA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We evaluated electrical characteristics of MIS capacitor with Ultra-thin Si_3N_4 films were formed on the Si(100) and (110) surfaces using NH^*. Characteristics of Si_3N_4 formed on Si(100) are almost equal to that on Si(110). We evaluated the interface structure of the Si_3N_4 films on Si(100), Si(110) and Si(111) by high-resolution (100meV) XPS. Amount of the sub-nitride which consists transition-state region between Si and Si_3N_4, is proportional to the inverse number of the area density of these Si interfaces. That is, the higher area density of Si is the lower transition-state region between Si and Si_3N_4. We consider it is because direct nitridation using NH^* induce compression stress to the Si_3N_4 film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si_3N_4 / Surface orientation / XPS |
| Paper # | SDM2006-175 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characteristics and Interface Structure of Ultra-thin Si_3N_4 films on Si(100) and Si(110) |
| Sub Title (in English) | |
| Keyword(1) | Si_3N_4 |
| Keyword(2) | Surface orientation |
| Keyword(3) | XPS |
| 1st Author's Name | Takashi ARATANI |
| 1st Author's Affiliation | Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Masaaki HIGUCHI |
| 2nd Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 3rd Author's Name | Tatsufumi HAMADA |
| 3rd Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Akinobu TERAMOTO |
| 4th Author's Affiliation | New Industry Creation Hatchery Center Tohoku University |
| 5th Author's Name | Takeo HATTORI |
| 5th Author's Affiliation | New Industry Creation Hatchery Center Tohoku University:Department of Electrical and Electronic Engineering, Musashi Instite of Technology |
| 6th Author's Name | Shigetoshi SUGAWA |
| 6th Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 7th Author's Name | Tadahiro OHMI |
| 7th Author's Affiliation | New Industry Creation Hatchery Center Tohoku University |
| 8th Author's Name | Seiji SHINAGAWA |
| 8th Author's Affiliation | Department of Electrical and Electronic Engineering, Musashi Instite of Technology |
| 9th Author's Name | Hiroshi NOHIRA |
| 9th Author's Affiliation | Department of Electrical and Electronic Engineering, Musashi Instite of Technology |
| 10th Author's Name | Eiji IKENAGA |
| 10th Author's Affiliation | JASRI SPring8 |
| Date | 2006/9/28 |
| Paper # | SDM2006-175 |
| Volume (vol) | vol.106 |
| Number (no) | 277 |
| Page | pp.pp.- |
| #Pages | 5 |
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