| Presentation | 2006-10-04 High voltage-capacitance characteristics measurement for SiC-JFET : Circuits for applying high bias voltage and gate voltage to SiC-JFET Syuntaro MATSUZAKI, Tsuyoshi FUNAKI, Takashi HIKIHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have been modeling SiC power devices for circuit simulation to design and evaluate power converter circuit. The electrical characteristics measurement of SiC-SBD and its modeling were discussed in the previous article. This article reports the measuring methods for the characterization of SiC-JFET. The DC characteristics of a device can be measured by using existing measuring equipments. However there is no existing devices to measure the AC characteristics of SiC-JFET input capacitance, output capacitance, and feedback capacitance over high bias drain voltage with applying negative DC gate voltage to keep the JFET off condition. The authors propose measurement circuits for the AC characterization of a JFET. The authors also discuss the models of SiC-JFET with the measured AC and DC characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC-JFET / Capacitance characteristics / Injected gate charge / Parameter extraction |
| Paper # | CAS2006-24,NLP2006-47 |
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| Conference Information | |
| Committee | NLP |
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| Conference Date | 2006/9/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Nonlinear Problems (NLP) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High voltage-capacitance characteristics measurement for SiC-JFET : Circuits for applying high bias voltage and gate voltage to SiC-JFET |
| Sub Title (in English) | |
| Keyword(1) | SiC-JFET |
| Keyword(2) | Capacitance characteristics |
| Keyword(3) | Injected gate charge |
| Keyword(4) | Parameter extraction |
| 1st Author's Name | Syuntaro MATSUZAKI |
| 1st Author's Affiliation | Department of Electrical Engineering, Kyoto University() |
| 2nd Author's Name | Tsuyoshi FUNAKI |
| 2nd Author's Affiliation | Department of Electrical Engineering, Kyoto University |
| 3rd Author's Name | Takashi HIKIHARA |
| 3rd Author's Affiliation | Department of Electrical Engineering, Kyoto University |
| Date | 2006-10-04 |
| Paper # | CAS2006-24,NLP2006-47 |
| Volume (vol) | vol.106 |
| Number (no) | 274 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |