Presentation 2006-10-04
A Study of the Power-Diode Model in Consideration of Reverse Recovery and Depletion Layer Charge
Tsuyoshi FUNAKI, Takashi SAWADA, Takashi HIKIHARA,
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Abstract(in English) In the switching circuits using power semiconductor devices, the reverse recovery of diodes produces an increase in the power dissipation in circuits and limits their switching speed. For this reason, it is important to model the reverse recovery characteristics and to evaluate them. In this article, the charge in power-diode's depletion layer is obtained from reverse recovery characteristics under various bias conditions or current changing rates, and compared with that from capacitance-voltage characteristic measured separately. Then, the authors discuss the diode model on the basis of the measured characteristics.
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Keyword(in English) power-diode / reverse recovery characteristic / depletion-layer charge
Paper # CAS2006-23,NLP2006-46
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Committee NLP
Conference Date 2006/9/27(1days)
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Registration To Nonlinear Problems (NLP)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Study of the Power-Diode Model in Consideration of Reverse Recovery and Depletion Layer Charge
Sub Title (in English)
Keyword(1) power-diode
Keyword(2) reverse recovery characteristic
Keyword(3) depletion-layer charge
1st Author's Name Tsuyoshi FUNAKI
1st Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering, Kyoto University()
2nd Author's Name Takashi SAWADA
2nd Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering, Kyoto University
3rd Author's Name Takashi HIKIHARA
3rd Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering, Kyoto University
Date 2006-10-04
Paper # CAS2006-23,NLP2006-46
Volume (vol) vol.106
Number (no) 274
Page pp.pp.-
#Pages 6
Date of Issue