Presentation 2006-10-06
GaN films deposited by CS-MBD with pulsed source feeding
Masatoshi ARAI, Koichi SUGIMOTO, Shinichi EGAWA, Taichi BABA, HONDA Tohru /,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaN films were deposited at low temperature by compound-source molecular beam deposition (CS-MBD) with pulsed-source feeding. As the interval time of the pulsed-source feeding during the GaN deposition was increased, the amount of excess Ga in the deposited films was decreased. Cathodoluminescence (CL) intensity was improved with the decrease in the amount of excess Ga in the deposited films. GaN-based thin-film electroluminescent devices (TF-ELDs) using the deposited films were fabricated. The TF-ELDs were operated and Near-ultraviolet (UV) light emission, whose peak wavelength was located 390nm, was observed from the devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / CL / EL / MBE
Paper # ED2006-169,CPM2006-106,LQE2006-73
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Conference Information
Committee CPM
Conference Date 2006/9/28(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaN films deposited by CS-MBD with pulsed source feeding
Sub Title (in English)
Keyword(1) GaN
Keyword(2) CL
Keyword(3) EL
Keyword(4) MBE
1st Author's Name Masatoshi ARAI
1st Author's Affiliation Department of Electronic Engineering, Kogakuin University()
2nd Author's Name Koichi SUGIMOTO
2nd Author's Affiliation Department of Electronic Engineering, Kogakuin University
3rd Author's Name Shinichi EGAWA
3rd Author's Affiliation Department of Electronic Engineering, Kogakuin University
4th Author's Name Taichi BABA
4th Author's Affiliation Department of Electronic Engineering, Kogakuin University
5th Author's Name HONDA Tohru /
5th Author's Affiliation Department of Electronic Engineering, Kogakuin University
Date 2006-10-06
Paper # ED2006-169,CPM2006-106,LQE2006-73
Volume (vol) vol.106
Number (no) 270
Page pp.pp.-
#Pages 4
Date of Issue