Presentation 2006-10-06
Fabrication of GaN-based unipolar UV LEDs grown by MOVPE
Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda,
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Abstract(in English) Schottky-type light-emitting diodes (ST-LEDs) were fabricated using GaN layer grown on (0001) sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The near-bandegde emission (NBE) of GaN was observed from ST-LEDs with reverse bias and pulsed voltage condition. The spectra were detected from the sapphire-substrate side. Photoluminescence spectra of GaN layers were observed at the temperature from room temperature (RT) to 500K. The peak energy of NBE is shifted towards lower energy side as increasing the observed temperature. The heat generation in ST-LEDs was considered. ST-LEDs using the bandgap narrowing by the heat generation is proposed and their advantageous for integration is discussed.
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Keyword(in English) GaN / LEDs / MOVPE
Paper # ED2006-167,CPM2006-104,LQE2006-71
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Conference Information
Committee CPM
Conference Date 2006/9/28(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GaN-based unipolar UV LEDs grown by MOVPE
Sub Title (in English)
Keyword(1) GaN
Keyword(2) LEDs
Keyword(3) MOVPE
1st Author's Name Toshiaki Kobayashi
1st Author's Affiliation Department of Electronic Engineering, Kogakuin University()
2nd Author's Name Shigetoshi Komiyama
2nd Author's Affiliation Department of Electronic Engineering, Kogakuin University
3rd Author's Name Yoshihiro Mashiyama
3rd Author's Affiliation Department of Electronic Engineering, Kogakuin University
4th Author's Name Tohru Honda
4th Author's Affiliation Department of Electronic Engineering, Kogakuin University
Date 2006-10-06
Paper # ED2006-167,CPM2006-104,LQE2006-71
Volume (vol) vol.106
Number (no) 270
Page pp.pp.-
#Pages 4
Date of Issue