Presentation | 2006-10-06 Features of Cathodoluminescence from bulk InGaN microcrystals Hisashi KANIE, Yuji SEMA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | InGaN microcrystals with blue cathodoluminecence were prepared by the two-stage growth method: the nitridation of previously synthesized GaN and indium sulfide by ammonia, and observed under a highly spatially resolved cathodoluminescence equipment attached to an SEM. CL images showed InGaN on an a-plane has a high two-dimensional growth rate and high CL Intensity. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InGaN / GaN / low-voltage phosphor / CL / two-dimensional growth |
Paper # | ED2006-165,CPM2006-102,LQE2006-69 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2006/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Features of Cathodoluminescence from bulk InGaN microcrystals |
Sub Title (in English) | |
Keyword(1) | InGaN |
Keyword(2) | GaN |
Keyword(3) | low-voltage phosphor |
Keyword(4) | CL |
Keyword(5) | two-dimensional growth |
1st Author's Name | Hisashi KANIE |
1st Author's Affiliation | Faculty of Industrial Science and Technology, Tokyo University of Science() |
2nd Author's Name | Yuji SEMA |
2nd Author's Affiliation | Faculty of Industrial Science and Technology, Tokyo University of Science |
Date | 2006-10-06 |
Paper # | ED2006-165,CPM2006-102,LQE2006-69 |
Volume (vol) | vol.106 |
Number (no) | 270 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |