| Presentation | 2006-10-06 Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate Hiroyuki UCHIDA, Akihiko KIKUCHI, Katsumi KISHINO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of next generation optical communication devices due to optical communication wavelength (1.55μm) carrier transition with ultrafast carrier relaxation time (140fs). On the other hand, the GaN nanocolumn has high crystalline due to dislocation free nature. In this study, we fabricated to photodetector structure and detection characteristics were evaluated, GaN nanocolumn were grown on Si(111) substrate inserting GaN/AlN multiple quantum disk (MQD) by RF-plasma assisted molecular beam epitaxy (RF-MBE). The absorption peak at 1.59μm by P-polarization light was observed. On the nanocolumn wafer Ti/Al thick electrode was deposited. The photodetection of GaN/AlN-MQD was occurred by irradiating the 1.47μm wavelength laser light at room temperature for the first time. The backside illumination has five times larger detectioncurrent than the surface illumination. Moreover, to confirm whether the principle of operation was ISBT, the dependence of polarization and wavelength etc. were evaluated. Those measurements were suggested that the origin of photodetection be ISBT because behavior to follow to the ISBT phenomenon of photocurrent had been seen. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN/AlN / intersubband transition / optical communication wavelength / photodetector / nanocolumn |
| Paper # | ED2006-163,CPM2006-100,LQE2006-67 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate |
| Sub Title (in English) | |
| Keyword(1) | GaN/AlN |
| Keyword(2) | intersubband transition |
| Keyword(3) | optical communication wavelength |
| Keyword(4) | photodetector |
| Keyword(5) | nanocolumn |
| 1st Author's Name | Hiroyuki UCHIDA |
| 1st Author's Affiliation | Faculty of Science and Technology, Sophia University() |
| 2nd Author's Name | Akihiko KIKUCHI |
| 2nd Author's Affiliation | Faculty of Science and Technology, Sophia University:CREST, JST |
| 3rd Author's Name | Katsumi KISHINO |
| 3rd Author's Affiliation | Faculty of Science and Technology, Sophia University:CREST, JST |
| Date | 2006-10-06 |
| Paper # | ED2006-163,CPM2006-100,LQE2006-67 |
| Volume (vol) | vol.106 |
| Number (no) | 270 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |