Presentation 2006-10-06
Investigation of optical gain of InGaN quantum well lasers emitting at 400 and 470nm
Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Ulrich T. Schwarz, Harald Braun, Shinichi Nagahama, Takashi Mukai,
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Abstract(in English) Optical gain spectra were measured for InGaN-based laser diodes (LDs) emitting at 408nm and 470nm (LD 470), by employing the Hakki-Paoli method. The internal loss coefficient was as large as 30cm^<-1> for the LD 470 compared to 25cm^<-1> for LD 408. Moreover, gain saturation was observed at about 490nm just below the lasing threshold, and a gain band appears at higher photon energies for further carrier injection resulting in lasing at 470nm. Spontaneous emission peaks of electroluminescence were measured as a function of injection current density below threshold for both samples. The huge blue shift of the spontaneous emission of LD470 of up to 450meV has contributions not only from the screening of piezoelectric field but also from the band-filling of localized tail states. The blue shift for the LD406 was as small as about 30meV and can be interpreted as a result of the screening by both injected carriers and dopants.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN / laser diodes / optical gain / In fluctuation / internal field
Paper # ED2006-161,CPM2006-98,LQE2006-65
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Committee CPM
Conference Date 2006/9/28(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of optical gain of InGaN quantum well lasers emitting at 400 and 470nm
Sub Title (in English)
Keyword(1) InGaN
Keyword(2) laser diodes
Keyword(3) optical gain
Keyword(4) In fluctuation
Keyword(5) internal field
1st Author's Name Kazunobu Kojima
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Mitsuru Funato
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name Yoichi Kawakami
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
4th Author's Name Ulrich T. Schwarz
4th Author's Affiliation Department of Physics, Regensburg University
5th Author's Name Harald Braun
5th Author's Affiliation Department of Physics, Regensburg University
6th Author's Name Shinichi Nagahama
6th Author's Affiliation Nitride Semiconductor Research Laboratory, Nichia Corporation
7th Author's Name Takashi Mukai
7th Author's Affiliation Nitride Semiconductor Research Laboratory, Nichia Corporation
Date 2006-10-06
Paper # ED2006-161,CPM2006-98,LQE2006-65
Volume (vol) vol.106
Number (no) 270
Page pp.pp.-
#Pages 5
Date of Issue