| Presentation | 2006-10-05 Influences of nitrogen plasma on crystalline quality of GaN films grown on Si(111) substrates at low-temperatures by electron cyclotron resonance plasma-assisted molecular-beam epitaxy Tokuo YODO, Yuki SHIRAISHI, Kiyotaka HIRATA, Hiroyuki TOMITA, Noriaki NISIE, Hiroaki HORIBE, Keigo IWATA, Yoshiyuki HARADA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have grown hexagonal-GaN films at 600℃ on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy and investigated influences of nitrogen plasma on crystalline quality of GaN films. Optical property of GaN film has been improved by decreasing relative intensity of nitrogen plasma spectrum. It is thought because the ion damage during GaN growth decreased when emission intensity of nitrogen plasma spectrum weakened. Moreover, we have investigated the distribution of nitrogen plasma by moving the position of electromagnet (the distance from the direction of growth (x); x=0～3.5cm) to examine the influence of the ion distribution in detail. As a result, near the band-edge PL emission became the most predominant when x=0cm. On the other hand, the microwave power gradually increases with an increase of x. The yellow luminescence became the most predominant at x=3.5cm and the crystalline quality of GaN film becomes the worst probably because of the increase of ion damage due to the increase of microwave power. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hexagonal-GaN / ECR-plasma assisted MBE / low temperature growth process / Si(111) substrate / ion damage |
| Paper # | ED2006-160,CPM2006-97,LQE2006-64 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influences of nitrogen plasma on crystalline quality of GaN films grown on Si(111) substrates at low-temperatures by electron cyclotron resonance plasma-assisted molecular-beam epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Hexagonal-GaN |
| Keyword(2) | ECR-plasma assisted MBE |
| Keyword(3) | low temperature growth process |
| Keyword(4) | Si(111) substrate |
| Keyword(5) | ion damage |
| 1st Author's Name | Tokuo YODO |
| 1st Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology() |
| 2nd Author's Name | Yuki SHIRAISHI |
| 2nd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 3rd Author's Name | Kiyotaka HIRATA |
| 3rd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 4th Author's Name | Hiroyuki TOMITA |
| 4th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 5th Author's Name | Noriaki NISIE |
| 5th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 6th Author's Name | Hiroaki HORIBE |
| 6th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 7th Author's Name | Keigo IWATA |
| 7th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 8th Author's Name | Yoshiyuki HARADA |
| 8th Author's Affiliation | Applied Physics, Osaka Institute of Technology |
| Date | 2006-10-05 |
| Paper # | ED2006-160,CPM2006-97,LQE2006-64 |
| Volume (vol) | vol.106 |
| Number (no) | 270 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |