Presentation 2006-10-05
Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy
Kenichi KOSAKA, Tatsuya FUJISHIMA, Kaoru INOUE, Akihiro HINOKI, Tomoaki YAMADA, Tadayoshi TSUCHIYA, Junjiroh KIKAWA, Shinichi KAMIYA, Akira SUZUKI, Tsutomu ARAKI, Yasushi NANISHI,
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Abstract(in English) Improvement in performance and reliability of high power RF devices is a key issue for AlGaN/GaN HFETs (Hetero-junction Field Effect Transistors). In this work, we have measured the temperature distribution in AlGaN/GaN HFETs on SiC substrates actually operated around breakdown voltage. Temperature distribution of the HFET was determined using micro-Raman spectroscopy, estimated from Raman shift of GaN E_2 (High) phonon mode. We observed temperature distribution of HFET driven by V_g=-3V (DC) and V_=50,65,80V (Pulse). The highest temperature position was shifted to the drain side at V_=60V and more. The results were compared with those by simulation, and indicated that virtual gate effects and high electric field region.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN/GaN HFETs / high-power operation / Micro-Raman spectroscopy / Temperature distribution
Paper # ED2006-159,CPM2006-96,LQE2006-63
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Committee CPM
Conference Date 2006/9/28(1days)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy
Sub Title (in English)
Keyword(1) AlGaN/GaN HFETs
Keyword(2) high-power operation
Keyword(3) Micro-Raman spectroscopy
Keyword(4) Temperature distribution
1st Author's Name Kenichi KOSAKA
1st Author's Affiliation Dept. of Photonics, Ritsumeikan University()
2nd Author's Name Tatsuya FUJISHIMA
2nd Author's Affiliation Dept. of Photonics, Ritsumeikan University
3rd Author's Name Kaoru INOUE
3rd Author's Affiliation Advanced HF Device R&D Center, R&D Association for Future Electron Devices
4th Author's Name Akihiro HINOKI
4th Author's Affiliation Dept. of Photonics, Ritsumeikan University
5th Author's Name Tomoaki YAMADA
5th Author's Affiliation Advanced HF Device R&D Center, R&D Association for Future Electron Devices
6th Author's Name Tadayoshi TSUCHIYA
6th Author's Affiliation Advanced HF Device R&D Center, R&D Association for Future Electron Devices
7th Author's Name Junjiroh KIKAWA
7th Author's Affiliation Advanced HF Device R&D Center, R&D Association for Future Electron Devices
8th Author's Name Shinichi KAMIYA
8th Author's Affiliation Advanced HF Device R&D Center, R&D Association for Future Electron Devices
9th Author's Name Akira SUZUKI
9th Author's Affiliation Res. Org. of Sci. & Eng., Ritsumeikan University:Advanced HF Device R&D Center, R&D Association for Future Electron Devices
10th Author's Name Tsutomu ARAKI
10th Author's Affiliation Dept. of Photonics, Ritsumeikan University
11th Author's Name Yasushi NANISHI
11th Author's Affiliation Dept. of Photonics, Ritsumeikan University
Date 2006-10-05
Paper # ED2006-159,CPM2006-96,LQE2006-63
Volume (vol) vol.106
Number (no) 270
Page pp.pp.-
#Pages 5
Date of Issue