| Presentation | 2006-10-05 Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki, Jun Suda, Tsunenobu Kimoto, Takashi Mimura, Toshiaki Matsui, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passivation were estimated in detail by x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. SiN passivation was performed by catalytic chemical vapor deposition (Cat-CVD), which has been already found to increase two-dimensional electron gas (2DEG) density. In this contribution, we demonstrate that a reduction of AlGaN surface barrier height is actually induced by Cat-CVD SiN passivation, which is most likely to be a significant factor of increase in the 2DEG density of AlGaN/GaN HFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN heterostructure field-effect transistor (HFET) / SiN passivation / catalytic chemical vapor deposition (Cat-CVD) / surface barrier height / x-ray photoelectron spectroscopy (XPS) / capacitance-voltage (C-V) |
| Paper # | ED2006-158,CPM2006-95,LQE2006-62 |
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| Committee | CPM |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN heterostructure field-effect transistor (HFET) |
| Keyword(2) | SiN passivation |
| Keyword(3) | catalytic chemical vapor deposition (Cat-CVD) |
| Keyword(4) | surface barrier height |
| Keyword(5) | x-ray photoelectron spectroscopy (XPS) |
| Keyword(6) | capacitance-voltage (C-V) |
| 1st Author's Name | Norio Onojima |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT)() |
| 2nd Author's Name | Masataka Higashiwaki |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Jun Suda |
| 3rd Author's Affiliation | Kyoto University Kyotodaigaku |
| 4th Author's Name | Tsunenobu Kimoto |
| 4th Author's Affiliation | Kyoto University Kyotodaigaku |
| 5th Author's Name | Takashi Mimura |
| 5th Author's Affiliation | National Institute of Information and Communications Technology (NICT):Fujitsu Laboratories Ltd. |
| 6th Author's Name | Toshiaki Matsui |
| 6th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| Date | 2006-10-05 |
| Paper # | ED2006-158,CPM2006-95,LQE2006-62 |
| Volume (vol) | vol.106 |
| Number (no) | 270 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |