Presentation | 2006-10-05 Interface control for GaN-based devices T. Kimura, J. Kotani, H. Kato, M. Tajima, E. Ogawa, C. Mizue, T. Hashizume, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper presents formation and characterization of the interface structures for improvement device performance and stability. First, we propose a surface control process using an ultrathin Al layer for suppressing oxygen impurity from the AlGaN surface. The AlGaN/GaN HEMT with the surface process showed the pronounced reduction of gate leakage currents and the excellent endurance against the temperature and bias stress. Then, we prepared the CN/n-GaN structure by ECRCVD. The deposition of a thin CN layer on GaN brought the reduction of surface potential at the GaN surface. It was also found that the surface resistivity of n-GaN increased after annealing the SiN/CN/n-GaN structure at 1000℃. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / Schottky / leakage current / operation stability / surface process / oxygen / CN |
Paper # | ED2006-157,CPM2006-94,LQE2006-61 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2006/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Interface control for GaN-based devices |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | Schottky |
Keyword(4) | leakage current |
Keyword(5) | operation stability |
Keyword(6) | surface process |
Keyword(7) | oxygen |
Keyword(8) | CN |
1st Author's Name | T. Kimura |
1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
2nd Author's Name | J. Kotani |
2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
3rd Author's Name | H. Kato |
3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
4th Author's Name | M. Tajima |
4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
5th Author's Name | E. Ogawa |
5th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
6th Author's Name | C. Mizue |
6th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
7th Author's Name | T. Hashizume |
7th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
Date | 2006-10-05 |
Paper # | ED2006-157,CPM2006-94,LQE2006-61 |
Volume (vol) | vol.106 |
Number (no) | 270 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |