Presentation | 2006-10-05 RF characteristics of AlGaN/GaN-HEMTs on Si substrates Hideyuki OKITA, Juro MITA, Yoshiaki SANO, Toshiharu MARUI, Masanori ITO, Shinichi HOSHI, Fumihiko TODA, Shohei SEKI, Takashi EGAWA, |
||
---|---|---|---|
PDF Download Page | PDF download Page Link | ||
Abstract(in Japanese) | (See Japanese page) | ||
Abstract(in English) | AlGaN/GaN-HEMTs (High Electron Mobility Transistors) on Silicon substrate, with recessed ohmic and recessed gate electrodes were fabricated. By optimizing ohmic and gate recess depth, we obtained a superior maximum extrinsic trans-conductance (g_) by gate recessing, stepper exposure technique with fine alignment accuracy was used to fabricate AlGaN/GaN-HEMT on 3 inches Si substrate. To minimize difference of wafers, we made gate recessed part in the half, and non-gate recessed part in the other half, in the same wafer. As a result, we found that, the standard deviation of V_ | , in recessed and non-recessed part, was 43mV and 75mV respectively, which were very small. We also fabricated HEMTs with gate length of 0.7μm, with gate width of 840μm(420μm×2). From the load-pull power measurement at 2.14GHz, Vds of 50V bias, saturated output power (P_ | |
Keyword(in Japanese) | (See Japanese page) | ||
Keyword(in English) | AlGaN/GaN-HEMT / Si substrate / recessed ohmic / recessed gate / RF characteristics / Uniformity | ||
Paper # | ED2006-154,CPM2006-91,LQE2006-58 | ||
Date of Issue |
Conference Information | |
Committee | CPM |
---|---|
Conference Date | 2006/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | RF characteristics of AlGaN/GaN-HEMTs on Si substrates |
Sub Title (in English) | |
Keyword(1) | AlGaN/GaN-HEMT |
Keyword(2) | Si substrate |
Keyword(3) | recessed ohmic |
Keyword(4) | recessed gate |
Keyword(5) | RF characteristics |
Keyword(6) | Uniformity |
1st Author's Name | Hideyuki OKITA |
1st Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd.() |
2nd Author's Name | Juro MITA |
2nd Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
3rd Author's Name | Yoshiaki SANO |
3rd Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
4th Author's Name | Toshiharu MARUI |
4th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
5th Author's Name | Masanori ITO |
5th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
6th Author's Name | Shinichi HOSHI |
6th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
7th Author's Name | Fumihiko TODA |
7th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
8th Author's Name | Shohei SEKI |
8th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
9th Author's Name | Takashi EGAWA |
9th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
Date | 2006-10-05 |
Paper # | ED2006-154,CPM2006-91,LQE2006-58 |
Volume (vol) | vol.106 |
Number (no) | 270 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |