Presentation | 2006-10-05 X-band AlGaN/GaN HEMTs with 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 11.52mm gate periphery exhibits output power of over 39.8W with a power added efficiency (PAE) of 28.4% under VDS=30V, CW operating condition at 9.5GHz. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN / GaN / HEMT / X-band / 40W / high power / channel temperature |
Paper # | ED2006-152,CPM2006-89,LQE2006-56 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2006/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
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Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | X-band AlGaN/GaN HEMTs with 40W Output Power |
Sub Title (in English) | |
Keyword(1) | AlGaN |
Keyword(2) | GaN |
Keyword(3) | HEMT |
Keyword(4) | X-band |
Keyword(5) | 40W |
Keyword(6) | high power |
Keyword(7) | channel temperature |
1st Author's Name | Yasushi Kashiwabara |
1st Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation() |
2nd Author's Name | Kazutoshi Masuda |
2nd Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
3rd Author's Name | Keiichi Matsushita |
3rd Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
4th Author's Name | Hiroyuki Sakurai |
4th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
5th Author's Name | Shinji Takatsuka |
5th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
6th Author's Name | Kazutaka Takagi |
6th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
7th Author's Name | Hisao Kawasaki |
7th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
8th Author's Name | Yoshiharu Takada |
8th Author's Affiliation | Advanced Electron Devices Laboratory, Corporate R&D Center |
9th Author's Name | Kunio Tsuda |
9th Author's Affiliation | Advanced Electron Devices Laboratory, Corporate R&D Center |
Date | 2006-10-05 |
Paper # | ED2006-152,CPM2006-89,LQE2006-56 |
Volume (vol) | vol.106 |
Number (no) | 270 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |