Presentation 2006-10-05
X-band AlGaN/GaN HEMTs with 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 11.52mm gate periphery exhibits output power of over 39.8W with a power added efficiency (PAE) of 28.4% under VDS=30V, CW operating condition at 9.5GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN / GaN / HEMT / X-band / 40W / high power / channel temperature
Paper # ED2006-152,CPM2006-89,LQE2006-56
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Committee CPM
Conference Date 2006/9/28(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) X-band AlGaN/GaN HEMTs with 40W Output Power
Sub Title (in English)
Keyword(1) AlGaN
Keyword(2) GaN
Keyword(3) HEMT
Keyword(4) X-band
Keyword(5) 40W
Keyword(6) high power
Keyword(7) channel temperature
1st Author's Name Yasushi Kashiwabara
1st Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation()
2nd Author's Name Kazutoshi Masuda
2nd Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation
3rd Author's Name Keiichi Matsushita
3rd Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation
4th Author's Name Hiroyuki Sakurai
4th Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation
5th Author's Name Shinji Takatsuka
5th Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation
6th Author's Name Kazutaka Takagi
6th Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation
7th Author's Name Hisao Kawasaki
7th Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation
8th Author's Name Yoshiharu Takada
8th Author's Affiliation Advanced Electron Devices Laboratory, Corporate R&D Center
9th Author's Name Kunio Tsuda
9th Author's Affiliation Advanced Electron Devices Laboratory, Corporate R&D Center
Date 2006-10-05
Paper # ED2006-152,CPM2006-89,LQE2006-56
Volume (vol) vol.106
Number (no) 270
Page pp.pp.-
#Pages 5
Date of Issue