Presentation | 2006-08-18 The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories Hideaki KURATA, Kazuo OTSUGA, Akira KOTABE, Shinya KAJIYAMA, Taro OSABE, Yoshitaka SASAGO, Shunichi NARUMI, Kenji TOKAMI, Shiro KAMOHARA, Osamu TSUCHIYA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegraph signal (RTS) in flash memory. We acquired large amount of data of Vth fluctuation by using a 90-nm node memory array and confirmed that a few memory cells have large RTS fluctuation exceeding 0.2V. We also found that the tail bits are generated due to RTS in multilevel flash operation by simulation and measurement results. The amount of Vth broadening due to the tail bits becomes larger as the scaling advances, and reaches to more than 0.3V in 45-nm node. Thus the RTS becomes prominent issue for the design of multilevel flash memory in 45-nm node and beyond. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Random telegraph signal / Flash memory / Multilevel cell technology / Vth fluctuation |
Paper # | SDM2006-153,ICD2006-107 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2006/8/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories |
Sub Title (in English) | |
Keyword(1) | Random telegraph signal |
Keyword(2) | Flash memory |
Keyword(3) | Multilevel cell technology |
Keyword(4) | Vth fluctuation |
1st Author's Name | Hideaki KURATA |
1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
2nd Author's Name | Kazuo OTSUGA |
2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
3rd Author's Name | Akira KOTABE |
3rd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
4th Author's Name | Shinya KAJIYAMA |
4th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
5th Author's Name | Taro OSABE |
5th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
6th Author's Name | Yoshitaka SASAGO |
6th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
7th Author's Name | Shunichi NARUMI |
7th Author's Affiliation | Renesas Technology Corp. |
8th Author's Name | Kenji TOKAMI |
8th Author's Affiliation | Renesas Technology Corp. |
9th Author's Name | Shiro KAMOHARA |
9th Author's Affiliation | Renesas Technology Corp. |
10th Author's Name | Osamu TSUCHIYA |
10th Author's Affiliation | Renesas Technology Corp. |
Date | 2006-08-18 |
Paper # | SDM2006-153,ICD2006-107 |
Volume (vol) | vol.106 |
Number (no) | 207 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |