Presentation 2006-08-18
A 65nm SoC Embedded 6T-SRAM Design for Manufacturing with Read and Write Cell Stabilizing Circuits
Makoto YABUUCHI, Shigeki OHBAYASHI, Koji NII, Yasumasa TSUKAMOTO, Susumu IMAOKA, Motoshige IGARASHI, Masahiko TAKEUCHI, Hiroshi KAWASHIMA, Hiroshi MAKINO, Yasuo YAMAGUCHI, Kazuhiro TSUKAMOTO, Masahide INUISHI, Koichiro ISHIBASHI, Hirofumi SHINOHARA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We propose a new design scheme to improve the SRAM read and write operation margins in the presence of a large Vth variability. By applying this scheme to a 0.494μm^2 SRAM cell with a β ratio of 1, which is an aggressively small cell size, we can achieve a high-yield 8M-SRAM for a wide range of Vth value using a 65nm LSTP CMOS technology.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SRAM / CMOS / Assist circuit / 65nm CMOS / Vth curve / Variability
Paper # SDM2006-151,ICD2006-105
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Conference Date 2006/8/10(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 65nm SoC Embedded 6T-SRAM Design for Manufacturing with Read and Write Cell Stabilizing Circuits
Sub Title (in English)
Keyword(1) SRAM
Keyword(2) CMOS
Keyword(3) Assist circuit
Keyword(4) 65nm CMOS
Keyword(5) Vth curve
Keyword(6) Variability
1st Author's Name Makoto YABUUCHI
1st Author's Affiliation Renesas Technology Corporation()
2nd Author's Name Shigeki OHBAYASHI
2nd Author's Affiliation Renesas Technology Corporation
3rd Author's Name Koji NII
3rd Author's Affiliation Renesas Technology Corporation
4th Author's Name Yasumasa TSUKAMOTO
4th Author's Affiliation Renesas Technology Corporation
5th Author's Name Susumu IMAOKA
5th Author's Affiliation Renesas Design Corporation
6th Author's Name Motoshige IGARASHI
6th Author's Affiliation Renesas Technology Corporation
7th Author's Name Masahiko TAKEUCHI
7th Author's Affiliation Renesas Technology Corporation
8th Author's Name Hiroshi KAWASHIMA
8th Author's Affiliation Renesas Technology Corporation
9th Author's Name Hiroshi MAKINO
9th Author's Affiliation Renesas Technology Corporation
10th Author's Name Yasuo YAMAGUCHI
10th Author's Affiliation Renesas Technology Corporation
11th Author's Name Kazuhiro TSUKAMOTO
11th Author's Affiliation Renesas Technology Corporation
12th Author's Name Masahide INUISHI
12th Author's Affiliation Renesas Technology Corporation
13th Author's Name Koichiro ISHIBASHI
13th Author's Affiliation Renesas Technology Corporation
14th Author's Name Hirofumi SHINOHARA
14th Author's Affiliation Renesas Technology Corporation
Date 2006-08-18
Paper # SDM2006-151,ICD2006-105
Volume (vol) vol.106
Number (no) 207
Page pp.pp.-
#Pages 5
Date of Issue