Presentation | 2006-08-18 High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology S. Yamaguchi, K. Tai, T. Hirano, T. Ando, S. Hiyama, J. Wang, Y. Hagimoto, Y. Nagahama, T. Kato, K. Nagano, M. Yamanaka, S. Terauchi, S. Kanda, R. Yamamoto, Y. Tateshita, Y. Tagawa, H. Iwamoto, M. Saito, N. Nagashima, S. Kadomura, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed a dual metal gate CMOS technology with HfSi_x for nMOS and Ru for pMOS on HfO_2 gate dielectric. These gate stacks show high mobility (100% of universal mobility for electron, 80% for hole at high fields) down to T_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | metal gate / High-k / Gate-Last process / (110)-substrate |
Paper # | SDM2006-146,ICD2006-100 |
Date of Issue |
Conference Information | |
Committee | ICD |
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Conference Date | 2006/8/10(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
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Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology |
Sub Title (in English) | |
Keyword(1) | metal gate |
Keyword(2) | High-k |
Keyword(3) | Gate-Last process |
Keyword(4) | (110)-substrate |
1st Author's Name | S. Yamaguchi |
1st Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation() |
2nd Author's Name | K. Tai |
2nd Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
3rd Author's Name | T. Hirano |
3rd Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
4th Author's Name | T. Ando |
4th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
5th Author's Name | S. Hiyama |
5th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
6th Author's Name | J. Wang |
6th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
7th Author's Name | Y. Hagimoto |
7th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
8th Author's Name | Y. Nagahama |
8th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
9th Author's Name | T. Kato |
9th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
10th Author's Name | K. Nagano |
10th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
11th Author's Name | M. Yamanaka |
11th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
12th Author's Name | S. Terauchi |
12th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
13th Author's Name | S. Kanda |
13th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
14th Author's Name | R. Yamamoto |
14th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
15th Author's Name | Y. Tateshita |
15th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
16th Author's Name | Y. Tagawa |
16th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
17th Author's Name | H. Iwamoto |
17th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
18th Author's Name | M. Saito |
18th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
19th Author's Name | N. Nagashima |
19th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
20th Author's Name | S. Kadomura |
20th Author's Affiliation | Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation |
Date | 2006-08-18 |
Paper # | SDM2006-146,ICD2006-100 |
Volume (vol) | vol.106 |
Number (no) | 207 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |