Presentation | 2006-08-18 Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs Ken SHIMIZU, Takuya SARAYA, Toshiro HIRAMOTO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | (110)-oriented pMOSFET is a promising choice for future CMOS device. However, physical origin of breakdown on mobility universality is still unknown. This paper describes experimental determination of the value of η by changing SOI thickness and temperature. It is found that in the case of <100>-directed channel on (110)-oriented pMOSFETs, η should be larger than unity, which implies the collapse of mobility universality, when temperature is low or SOI thickness is ultimately thin. The possible origin of universality breakdown is due to direction-dependent scattering mechanisms. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | (110)-oriented pMOSFET / mobility universality / mobility |
Paper # | SDM2006-143,ICD2006-97 |
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Committee | ICD |
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Conference Date | 2006/8/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs |
Sub Title (in English) | |
Keyword(1) | (110)-oriented pMOSFET |
Keyword(2) | mobility universality |
Keyword(3) | mobility |
1st Author's Name | Ken SHIMIZU |
1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
2nd Author's Name | Takuya SARAYA |
2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
3rd Author's Name | Toshiro HIRAMOTO |
3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
Date | 2006-08-18 |
Paper # | SDM2006-143,ICD2006-97 |
Volume (vol) | vol.106 |
Number (no) | 207 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |