Presentation 2006-08-18
Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs
Ken SHIMIZU, Takuya SARAYA, Toshiro HIRAMOTO,
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Abstract(in English) (110)-oriented pMOSFET is a promising choice for future CMOS device. However, physical origin of breakdown on mobility universality is still unknown. This paper describes experimental determination of the value of η by changing SOI thickness and temperature. It is found that in the case of <100>-directed channel on (110)-oriented pMOSFETs, η should be larger than unity, which implies the collapse of mobility universality, when temperature is low or SOI thickness is ultimately thin. The possible origin of universality breakdown is due to direction-dependent scattering mechanisms.
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Keyword(in English) (110)-oriented pMOSFET / mobility universality / mobility
Paper # SDM2006-143,ICD2006-97
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Conference Date 2006/8/10(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs
Sub Title (in English)
Keyword(1) (110)-oriented pMOSFET
Keyword(2) mobility universality
Keyword(3) mobility
1st Author's Name Ken SHIMIZU
1st Author's Affiliation Institute of Industrial Science, University of Tokyo()
2nd Author's Name Takuya SARAYA
2nd Author's Affiliation Institute of Industrial Science, University of Tokyo
3rd Author's Name Toshiro HIRAMOTO
3rd Author's Affiliation Institute of Industrial Science, University of Tokyo
Date 2006-08-18
Paper # SDM2006-143,ICD2006-97
Volume (vol) vol.106
Number (no) 207
Page pp.pp.-
#Pages 5
Date of Issue