Presentation 2006-09-25
Sensitivity of CMOS Image Sensor and Scaling
YunKyung KIM, Makoto IKEDA, Kunihiro ASADA,
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Abstract(in English) CMOS technologies are improved in deep sub-micron technologies. CMOS based imagers in advanced processes have low sensitivity characteristics. It is important to scale the trend of sensitivity characterisitcs for a high sensitivity imager. In this paper, we show the sensitivity characteristics of CMOS based imagers fabricated by 0.35μm, 0.6μm technologies, and we show the trends of sensitivity in advanced processes.
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Keyword(in English) CMOS image sensor / spectral sensitivity / quantum efficiency
Paper # VLD2006-34,SDM2006-155
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Conference Information
Committee SDM
Conference Date 2006/9/18(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Sensitivity of CMOS Image Sensor and Scaling
Sub Title (in English)
Keyword(1) CMOS image sensor
Keyword(2) spectral sensitivity
Keyword(3) quantum efficiency
1st Author's Name YunKyung KIM
1st Author's Affiliation Dept. of Electronic Engineering, University of Tokyo()
2nd Author's Name Makoto IKEDA
2nd Author's Affiliation Dept. of Electronic Engineering, University of Tokyo:VLSI Design and Education Center, University of Tokyo
3rd Author's Name Kunihiro ASADA
3rd Author's Affiliation Dept. of Electronic Engineering, University of Tokyo:VLSI Design and Education Center, University of Tokyo
Date 2006-09-25
Paper # VLD2006-34,SDM2006-155
Volume (vol) vol.106
Number (no) 256
Page pp.pp.-
#Pages 5
Date of Issue