| Presentation | 2006-08-17 Critical temperature switch circuit with CMOS subthreshold region Atsushi HAGIWARA, Tetsuya HIROSE, Tetsuya ASAI, Yoshihito AMEMIYA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a thermosensing circuit that changes its internal state abruptly at a threshold temperature. The circuit switches its output-node voltage from a high value to a low one when temperature exceeds the threshold. The circuit makes use of the transition of a MOSFET resistor from strong-inversion operation to week-inversion or subthreshold operation. The threshold temperature for the transition can be set to a desired value from 0℃ to 100℃ by adjusting the parameters of MOSFETs in the circuit. The circuit can be made with a standard CMOS process and can be used as over-temperature detectors and over-current protectors for LSI circuits. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS / subthreshold current / temperature detection |
| Paper # | SDM2006-131,ICD2006-85 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/8/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Critical temperature switch circuit with CMOS subthreshold region |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | subthreshold current |
| Keyword(3) | temperature detection |
| 1st Author's Name | Atsushi HAGIWARA |
| 1st Author's Affiliation | Department of Electrical Engineering, Hokkaido University() |
| 2nd Author's Name | Tetsuya HIROSE |
| 2nd Author's Affiliation | Department of Electrical Engineering, Hokkaido University |
| 3rd Author's Name | Tetsuya ASAI |
| 3rd Author's Affiliation | Department of Electrical Engineering, Hokkaido University |
| 4th Author's Name | Yoshihito AMEMIYA |
| 4th Author's Affiliation | Department of Electrical Engineering, Hokkaido University |
| Date | 2006-08-17 |
| Paper # | SDM2006-131,ICD2006-85 |
| Volume (vol) | vol.106 |
| Number (no) | 206 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |