Presentation | 2006/9/1 Dielectric properties of solution-coated gate insulator thin films Tatsunori MIYAZAWA, Naoki WATANABE, Hiroyoshi NAITO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The density and diffusion coefficient of impurity ions in a gate insulator have been determined by measuring the dielectric constants of the insulator. It is shown that the impurity ions are detectible above the density of the ions of>1×10^<14>cm^<-3>. The polarity of impurity ions is determined from threshold voltage shift in C-V characteristics of MIS device (Al/silica/Poly(3-hexylthiophene)/Au). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Organic semiconductor / gate insulator / impurity ions / solution process / assessment method |
Paper # | ED2006-145,OME2006-70 |
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Committee | OME |
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Conference Date | 2006/9/1(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Dielectric properties of solution-coated gate insulator thin films |
Sub Title (in English) | |
Keyword(1) | Organic semiconductor |
Keyword(2) | gate insulator |
Keyword(3) | impurity ions |
Keyword(4) | solution process |
Keyword(5) | assessment method |
1st Author's Name | Tatsunori MIYAZAWA |
1st Author's Affiliation | Department of Physics and Electronics, Osaka Prefecture University() |
2nd Author's Name | Naoki WATANABE |
2nd Author's Affiliation | Department of Physics and Electronics, Osaka Prefecture University |
3rd Author's Name | Hiroyoshi NAITO |
3rd Author's Affiliation | Department of Physics and Electronics, Osaka Prefecture University |
Date | 2006/9/1 |
Paper # | ED2006-145,OME2006-70 |
Volume (vol) | vol.106 |
Number (no) | 228 |
Page | pp.pp.- |
#Pages | 5 |
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