Presentation 2006/9/1
Dielectric properties of solution-coated gate insulator thin films
Tatsunori MIYAZAWA, Naoki WATANABE, Hiroyoshi NAITO,
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Abstract(in English) The density and diffusion coefficient of impurity ions in a gate insulator have been determined by measuring the dielectric constants of the insulator. It is shown that the impurity ions are detectible above the density of the ions of>1×10^<14>cm^<-3>. The polarity of impurity ions is determined from threshold voltage shift in C-V characteristics of MIS device (Al/silica/Poly(3-hexylthiophene)/Au).
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Keyword(in English) Organic semiconductor / gate insulator / impurity ions / solution process / assessment method
Paper # ED2006-145,OME2006-70
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Committee OME
Conference Date 2006/9/1(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dielectric properties of solution-coated gate insulator thin films
Sub Title (in English)
Keyword(1) Organic semiconductor
Keyword(2) gate insulator
Keyword(3) impurity ions
Keyword(4) solution process
Keyword(5) assessment method
1st Author's Name Tatsunori MIYAZAWA
1st Author's Affiliation Department of Physics and Electronics, Osaka Prefecture University()
2nd Author's Name Naoki WATANABE
2nd Author's Affiliation Department of Physics and Electronics, Osaka Prefecture University
3rd Author's Name Hiroyoshi NAITO
3rd Author's Affiliation Department of Physics and Electronics, Osaka Prefecture University
Date 2006/9/1
Paper # ED2006-145,OME2006-70
Volume (vol) vol.106
Number (no) 228
Page pp.pp.-
#Pages 5
Date of Issue