Presentation 2006/9/1
On the existence of the template layer guiding the low-resistivity ITO films by plasma sputtering
Akihiko KONO, Fumiya SHOJI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have studied the effect of substrate temperature on the electrical properties of tin-doped indium oxide films by the low pressure plasma sputtering. In thick films (>100nm), the carrier density of the films on heated substrates increased by approximately three times compared with those of films on unheated substrates. As a result, low-resistivity (9.8×10^<-5>Ωcm) ITO films were obtained on the heated substrates. Furthermore, there was evidence that anomalous behavior of carrier density existed in thin thickness range (0~40nm) irrespective of the substrate temperature. The existence of the template layer guiding the low-resistivity ITO films was strongly suggested from changes of number of carriers as a function of the film thickness.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ITO film / Plasma sputtering
Paper # ED2006-144,OME2006-69
Date of Issue

Conference Information
Committee OME
Conference Date 2006/9/1(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) On the existence of the template layer guiding the low-resistivity ITO films by plasma sputtering
Sub Title (in English)
Keyword(1) ITO film
Keyword(2) Plasma sputtering
1st Author's Name Akihiko KONO
1st Author's Affiliation Facutly of Engineering, Kyusyu Kyoritsu University()
2nd Author's Name Fumiya SHOJI
2nd Author's Affiliation Facutly of Engineering, Kyusyu Kyoritsu University
Date 2006/9/1
Paper # ED2006-144,OME2006-69
Volume (vol) vol.106
Number (no) 228
Page pp.pp.-
#Pages 5
Date of Issue