Presentation | 2006-09-26 Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects Masami HANE, Takeo IKEZAWA, MIichihito KAWADA, Tatsuya EZAKI, Toyoji YAMAMOTO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Simulation analysis of channel-orientation effects on strained silicon MOSFETs based on a full-band Monte Carlo method considering sub-band structures in the channel region was presented. Simulation results show that the nMOSFET drain-current increases with applying uniaxial tensile stress while it exhibits different behavior for <100> and <110> different channel directions. Further detailed analyses have been made to clarify appropriate physical mechanism of the drive-current-increase by means of a source-side-injection/backscattering concept. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Strained Silicon / Full-band Monte Carlo / subband / channel orientation |
Paper # | VLD2006-50,SDM2006-171 |
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Conference Information | |
Committee | VLD |
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Conference Date | 2006/9/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects |
Sub Title (in English) | |
Keyword(1) | Strained Silicon |
Keyword(2) | Full-band Monte Carlo |
Keyword(3) | subband |
Keyword(4) | channel orientation |
1st Author's Name | Masami HANE |
1st Author's Affiliation | System Devices Research Laboratories, NEC Corporation() |
2nd Author's Name | Takeo IKEZAWA |
2nd Author's Affiliation | NEC Informatec Systems, Inc. |
3rd Author's Name | MIichihito KAWADA |
3rd Author's Affiliation | NEC Informatec Systems, Inc. |
4th Author's Name | Tatsuya EZAKI |
4th Author's Affiliation | Hiroshima University |
5th Author's Name | Toyoji YAMAMOTO |
5th Author's Affiliation | MIRAI-ASET |
Date | 2006-09-26 |
Paper # | VLD2006-50,SDM2006-171 |
Volume (vol) | vol.106 |
Number (no) | 255 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |