Presentation 2006-09-26
Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects
Masami HANE, Takeo IKEZAWA, MIichihito KAWADA, Tatsuya EZAKI, Toyoji YAMAMOTO,
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Abstract(in English) Simulation analysis of channel-orientation effects on strained silicon MOSFETs based on a full-band Monte Carlo method considering sub-band structures in the channel region was presented. Simulation results show that the nMOSFET drain-current increases with applying uniaxial tensile stress while it exhibits different behavior for <100> and <110> different channel directions. Further detailed analyses have been made to clarify appropriate physical mechanism of the drive-current-increase by means of a source-side-injection/backscattering concept.
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Keyword(in English) Strained Silicon / Full-band Monte Carlo / subband / channel orientation
Paper # VLD2006-50,SDM2006-171
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Committee VLD
Conference Date 2006/9/19(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects
Sub Title (in English)
Keyword(1) Strained Silicon
Keyword(2) Full-band Monte Carlo
Keyword(3) subband
Keyword(4) channel orientation
1st Author's Name Masami HANE
1st Author's Affiliation System Devices Research Laboratories, NEC Corporation()
2nd Author's Name Takeo IKEZAWA
2nd Author's Affiliation NEC Informatec Systems, Inc.
3rd Author's Name MIichihito KAWADA
3rd Author's Affiliation NEC Informatec Systems, Inc.
4th Author's Name Tatsuya EZAKI
4th Author's Affiliation Hiroshima University
5th Author's Name Toyoji YAMAMOTO
5th Author's Affiliation MIRAI-ASET
Date 2006-09-26
Paper # VLD2006-50,SDM2006-171
Volume (vol) vol.106
Number (no) 255
Page pp.pp.-
#Pages 5
Date of Issue