Presentation 2006-09-26
Quantum Electron Transport Modeling in Nano-Scale Devices Based on Multiband Non-Equilibrium Green's Function Method
Helmy FITRIAWAN, Satofumi SOUMA, Matsuto OGAWA, Tanroku MIYOSHI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Aggressive scaling of devices has reduced device dimensions into nanometer scale in which the single-band effective mass model is insufficient to simulate quantum transport in such devices. Thus it motivates the use of more realistic full band structures in quantum transport simulations. In this paper we report the analysis of multiband quantum transport in nano-scale devices and doublegate MOSFETs based on a non-equilibrium Green's function (NEGF) formalism coupled self-consistently with the Poisson equation. The effects of non-parabolic bandstructure as well as anisotropic features of Si are studied and analyzed. Our multiband simulation results show significant differences with those of conventional effective mass model.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) non-equilibrium green's function / multiband carrier transport / nano-scale devices / double-gate MOSFETs
Paper # VLD2006-49,SDM2006-170
Date of Issue

Conference Information
Committee VLD
Conference Date 2006/9/19(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To VLSI Design Technologies (VLD)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Quantum Electron Transport Modeling in Nano-Scale Devices Based on Multiband Non-Equilibrium Green's Function Method
Sub Title (in English)
Keyword(1) non-equilibrium green's function
Keyword(2) multiband carrier transport
Keyword(3) nano-scale devices
Keyword(4) double-gate MOSFETs
1st Author's Name Helmy FITRIAWAN
1st Author's Affiliation Graduate School of Science and Technology, Kobe University()
2nd Author's Name Satofumi SOUMA
2nd Author's Affiliation Faculty of Engineering, Kobe University
3rd Author's Name Matsuto OGAWA
3rd Author's Affiliation Faculty of Engineering, Kobe University
4th Author's Name Tanroku MIYOSHI
4th Author's Affiliation Faculty of Engineering, Kobe University
Date 2006-09-26
Paper # VLD2006-49,SDM2006-170
Volume (vol) vol.106
Number (no) 255
Page pp.pp.-
#Pages 5
Date of Issue