| Presentation | 2006-09-26 Quantum Transport Simulation of Ballistic Current in Silicon Nanostructures with a Strained Layer Hideki MINARI, Nobuya MORI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have numerically calculated ballistic current in one-dimensional silicon nanostructures with a strained layer using a non-equilibrium Green's function method combined with an empirical sp^3d^5s^* tight-binding approximation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon / tight-binding approximation / non-equilibrium Green's function method / strain |
| Paper # | VLD2006-48,SDM2006-169 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2006/9/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantum Transport Simulation of Ballistic Current in Silicon Nanostructures with a Strained Layer |
| Sub Title (in English) | |
| Keyword(1) | silicon |
| Keyword(2) | tight-binding approximation |
| Keyword(3) | non-equilibrium Green's function method |
| Keyword(4) | strain |
| 1st Author's Name | Hideki MINARI |
| 1st Author's Affiliation | Graduate School of Engineering, Osaka University() |
| 2nd Author's Name | Nobuya MORI |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka University |
| Date | 2006-09-26 |
| Paper # | VLD2006-48,SDM2006-169 |
| Volume (vol) | vol.106 |
| Number (no) | 255 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |