| Presentation | 2006-09-26 Ballistic Transport in Nanoscale MOSFETs Hideaki TSUCHIYA, Kazuya FUJII, Takashi Mori, Tanroku MIYOSHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Quasi-ballistic transport is one of the technology boosters for drive current enhancement of Si-MOSFETs. In this paper, to explore its ultimate device performance we study a quasi-ballistic transport in nanoscale Si-MOSFETs based upon a quantum-corrected Monte Carlo device simulation. We found that when a channel length becomes shorter than 30nm, an electron average velocity at source-end of channel increases due to ballistic transport effects, and then it approaches a ballistic limit in the sub-10nm regime. We also demonstrated that ballistic transport indexes estimated by our simulation agree well with recent experimental results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | nanoscale MOSFET / quantum effects / quasi-ballistic transport / quantum-corrected Monte Carlo method |
| Paper # | VLD2006-47,SDM2006-168 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2006/9/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ballistic Transport in Nanoscale MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | nanoscale MOSFET |
| Keyword(2) | quantum effects |
| Keyword(3) | quasi-ballistic transport |
| Keyword(4) | quantum-corrected Monte Carlo method |
| 1st Author's Name | Hideaki TSUCHIYA |
| 1st Author's Affiliation | Faculty of Engineering, Kobe University() |
| 2nd Author's Name | Kazuya FUJII |
| 2nd Author's Affiliation | Faculty of Engineering, Kobe University |
| 3rd Author's Name | Takashi Mori |
| 3rd Author's Affiliation | Faculty of Engineering, Kobe University |
| 4th Author's Name | Tanroku MIYOSHI |
| 4th Author's Affiliation | Faculty of Engineering, Kobe University |
| Date | 2006-09-26 |
| Paper # | VLD2006-47,SDM2006-168 |
| Volume (vol) | vol.106 |
| Number (no) | 255 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |