| Presentation | 2006-09-26 Empirical Models of Phonon-Limited Electron Mobility for Ultra-Thin Body Single-Gate and Double-Gate SOI MOSFETs with (001) or (111) Si Surface Channel Tsuyoshi YAMAMURA, Shingo SATO, Yasuhisa OMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper proposes empirical models of the phonon-limited electron mobility of single-gate (SG) and double-gate (DG) SOI MOSFETs with (001) or (111) Si surface channel; they are functions of SOI layer thickness and the effective electric field. The proposed phonon-limited electron mobility models accurately reproduce self-consistent simulation results. Using the electron density derived from quantum simulations and the proposed empirical electron mobility models, I_d-V_g and g_m-V_g characteristics of SG and DG SOI MOSFETs with a 10-nm-thick SOI layer on (001) or (111) surface, are calculated in order to examine the potential of the proposed mobility models; they are compared to 2-D device simulation results (DEESIS simulator). It has been shown that the DESSIS results are not reliable if the device has such a thin SOI layer. The proposed model, on the other hand, clearly reproduces the impact of Si surface orientation and device structure. The proposed models are quite useful to precisely, and simply, estimate the drive current of various SOI MOSFETs and to reduce the computation time in device simulations and circuit simulations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI MOSFET / electron mobility / phonon scattering / quantum effects / surface orientation |
| Paper # | VLD2006-46,SDM2006-167 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2006/9/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Empirical Models of Phonon-Limited Electron Mobility for Ultra-Thin Body Single-Gate and Double-Gate SOI MOSFETs with (001) or (111) Si Surface Channel |
| Sub Title (in English) | |
| Keyword(1) | SOI MOSFET |
| Keyword(2) | electron mobility |
| Keyword(3) | phonon scattering |
| Keyword(4) | quantum effects |
| Keyword(5) | surface orientation |
| 1st Author's Name | Tsuyoshi YAMAMURA |
| 1st Author's Affiliation | Graduate School of Engineering, Kansai University() |
| 2nd Author's Name | Shingo SATO |
| 2nd Author's Affiliation | Graduate School of Engineering, Kansai University |
| 3rd Author's Name | Yasuhisa OMURA |
| 3rd Author's Affiliation | ORDIST, Kansai University |
| Date | 2006-09-26 |
| Paper # | VLD2006-46,SDM2006-167 |
| Volume (vol) | vol.106 |
| Number (no) | 255 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |