Presentation | 2006-09-26 Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal Ken'ichiro SONODA, Kiyoshi ISHIKAWA, Takahisa EIMORI, Osamu TSUCHIYA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper discusses the discrete channel dopant effects on the threshold voltage shift by random telegraph signal (RTS) in MOSFETs. Appropriate grid spacing to incorporate discrete dopant effects in three dimensional device simulation is addressed to obtain consistent results with continuum limit. Considering discrete dopant effects, the threshold voltage shift of MOSFETs by RTS follows the log-normal distribution, while the threshold voltage itself follows the normal distribution. An analytical model for the distribution of the threshold voltage shift is also presented. The threshold voltage shift by RTS will become a serious concern in 50nm flash memories and beyond. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | random telegraph signal / MOSFET / threshold voltage / discrete dopant |
Paper # | VLD2006-42,SDM2006-163 |
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Conference Information | |
Committee | VLD |
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Conference Date | 2006/9/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal |
Sub Title (in English) | |
Keyword(1) | random telegraph signal |
Keyword(2) | MOSFET |
Keyword(3) | threshold voltage |
Keyword(4) | discrete dopant |
1st Author's Name | Ken'ichiro SONODA |
1st Author's Affiliation | Renesas Technology Corp.() |
2nd Author's Name | Kiyoshi ISHIKAWA |
2nd Author's Affiliation | Renesas Technology Corp. |
3rd Author's Name | Takahisa EIMORI |
3rd Author's Affiliation | Renesas Technology Corp. |
4th Author's Name | Osamu TSUCHIYA |
4th Author's Affiliation | Renesas Technology Corp. |
Date | 2006-09-26 |
Paper # | VLD2006-42,SDM2006-163 |
Volume (vol) | vol.106 |
Number (no) | 255 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |