Presentation 2006-09-26
Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal
Ken'ichiro SONODA, Kiyoshi ISHIKAWA, Takahisa EIMORI, Osamu TSUCHIYA,
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Abstract(in English) This paper discusses the discrete channel dopant effects on the threshold voltage shift by random telegraph signal (RTS) in MOSFETs. Appropriate grid spacing to incorporate discrete dopant effects in three dimensional device simulation is addressed to obtain consistent results with continuum limit. Considering discrete dopant effects, the threshold voltage shift of MOSFETs by RTS follows the log-normal distribution, while the threshold voltage itself follows the normal distribution. An analytical model for the distribution of the threshold voltage shift is also presented. The threshold voltage shift by RTS will become a serious concern in 50nm flash memories and beyond.
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Keyword(in English) random telegraph signal / MOSFET / threshold voltage / discrete dopant
Paper # VLD2006-42,SDM2006-163
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Committee VLD
Conference Date 2006/9/19(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal
Sub Title (in English)
Keyword(1) random telegraph signal
Keyword(2) MOSFET
Keyword(3) threshold voltage
Keyword(4) discrete dopant
1st Author's Name Ken'ichiro SONODA
1st Author's Affiliation Renesas Technology Corp.()
2nd Author's Name Kiyoshi ISHIKAWA
2nd Author's Affiliation Renesas Technology Corp.
3rd Author's Name Takahisa EIMORI
3rd Author's Affiliation Renesas Technology Corp.
4th Author's Name Osamu TSUCHIYA
4th Author's Affiliation Renesas Technology Corp.
Date 2006-09-26
Paper # VLD2006-42,SDM2006-163
Volume (vol) vol.106
Number (no) 255
Page pp.pp.-
#Pages 6
Date of Issue