Presentation	2006-09-26 3D Atomistic Density Gradient Device Simulation Considering Random Doping Induced Fluctuations for MOSFETs Yoshio ASHIZAWA, Hideki OKA,
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Abstract(in English)	The density gradient approach is presented to device characteristics analysis with random dopant fluctuations. We investigate the basic characteristics for charge assignment and effective mobility to introduce density gradient approach into 3D atomistic device simulation. We demonstrate the resolution for electrostatic impurity scattering with SG SOI device structure.
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Keyword(in English)	Random Discrete Dopant / Density Gradient / Discretization Error / Atomistic / Sano Model
Paper #	VLD2006-40,SDM2006-161
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Committee	VLD
Conference Date	2006/9/19(1days)
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Paper Information
Registration To	VLSI Design Technologies (VLD)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	3D Atomistic Density Gradient Device Simulation Considering Random Doping Induced Fluctuations for MOSFETs
Sub Title (in English)
Keyword(1)	Random Discrete Dopant
Keyword(2)	Density Gradient
Keyword(3)	Discretization Error
Keyword(4)	Atomistic
Keyword(5)	Sano Model
1st Author's Name	Yoshio ASHIZAWA
1st Author's Affiliation	Fujitsu Laboratories Ltd.()
2nd Author's Name	Hideki OKA
2nd Author's Affiliation	Fujitsu Laboratories Ltd.
Date	2006-09-26
Paper #	VLD2006-40,SDM2006-161
Volume (vol)	vol.106
Number (no)	255
Page	pp.pp.-
#Pages	6
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