| Presentation | 2006-08-03 Development of diamond electron emitter devices : Approach for n-type emitter Yoshiki NISHIBAYASHI, Natsuo TATSUMI, Akihiko NAMBA, Yoshiyui YAMAMOTO, Takahiro IMAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The authors have developed uniform diamond emitter array devices for n-type. In order to achieve that, it is important to use our uniform fabrication technique and a large complex substrate developed in our laboratories, which has single crystal (111) plane in polycrystalline film. The authors have grown n-type film on the complex substrate successfully. In this paper, the authors report on uniform fabrication of n-type emitter devices and large total current of 1103mA at 1mm^2 from the sample. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | diamond / n-type / complex substrate / uniform fabrication / large emission current / electron source |
| Paper # | ED2006-123 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/7/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of diamond electron emitter devices : Approach for n-type emitter |
| Sub Title (in English) | |
| Keyword(1) | diamond |
| Keyword(2) | n-type |
| Keyword(3) | complex substrate |
| Keyword(4) | uniform fabrication |
| Keyword(5) | large emission current |
| Keyword(6) | electron source |
| 1st Author's Name | Yoshiki NISHIBAYASHI |
| 1st Author's Affiliation | Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.() |
| 2nd Author's Name | Natsuo TATSUMI |
| 2nd Author's Affiliation | Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd. |
| 3rd Author's Name | Akihiko NAMBA |
| 3rd Author's Affiliation | Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd. |
| 4th Author's Name | Yoshiyui YAMAMOTO |
| 4th Author's Affiliation | Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd. |
| 5th Author's Name | Takahiro IMAI |
| 5th Author's Affiliation | Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd. |
| Date | 2006-08-03 |
| Paper # | ED2006-123 |
| Volume (vol) | vol.106 |
| Number (no) | 200 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |