Presentation 2006-08-08
Formation of thick CeO_2 buffer layer for thick EuBa_2Cu_3O_<7-δ> flims
Keita KIKUCHI, Jun SAKUMA, Satoshi HUZIWARA, Yasuyuki OTA, Osamu MICHIKAMI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) By RF magnetron sputtering (001)-oriented CeO_2 buffer layers above 400 Å in thickness grow with (111)facet on R-Al_2O_3 substrates. EuBa_2Cu_3O_<7-δ> (EBCO) thin films are deposited with non-c-axis orientation on the CeO_2 buffer layer with (111)facet and exhibit poor superconducting properties. In the present work, we attempted to suppress (111)facet growth in thick CeO_2 buffer layer. By increasing deposition rate(R_d) under the optimum conditions, we were able to deposit facet-free CeO_2 buffer layers with uniformity and minuteness grains and CeO_2 buffer layers of 10000 Å were facet-free. EBCO thin films deposited on the thick CeO_2 buffer layer showed critical temparature(T_c)=91 K at the maximum.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) magnetron sputtering / CeO_2 / (111) facet
Paper # CPM2006-48
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Conference Information
Committee CPM
Conference Date 2006/7/31(1days)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of thick CeO_2 buffer layer for thick EuBa_2Cu_3O_<7-δ> flims
Sub Title (in English)
Keyword(1) magnetron sputtering
Keyword(2) CeO_2
Keyword(3) (111) facet
1st Author's Name Keita KIKUCHI
1st Author's Affiliation Faculty of Engineering, Iwate University()
2nd Author's Name Jun SAKUMA
2nd Author's Affiliation Faculty of Engineering, Iwate University
3rd Author's Name Satoshi HUZIWARA
3rd Author's Affiliation Faculty of Engineering, Iwate University
4th Author's Name Yasuyuki OTA
4th Author's Affiliation Faculty of Engineering, Iwate University
5th Author's Name Osamu MICHIKAMI
5th Author's Affiliation Faculty of Engineering, Iwate University
Date 2006-08-08
Paper # CPM2006-48
Volume (vol) vol.106
Number (no) 203
Page pp.pp.-
#Pages 4
Date of Issue