Presentation 2006-08-07
Growth of Ga doped ZnO films by RF sputtering in ambient Ar+H_2
Kouichi MUTOU, Norimitsu NASU, Hiroaki HASEBE, Osamu MICHIKAMI,
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Abstract(in English) We investigate the effect of H_2 concentration and substrate temperature on the surface morphology, crystallinity, electrical properties and optical properties of Ga doped ZnO films deposited on glass substrate by RF magnetron sputtering in ambent Ar+H_2. For H_2 concentration from 0% to 1%, resistivity at RT(ρRT) is 7.58×10^<-4> to 3.79×10^<-4>Ωcm. Transmission is around 90% in spite of H_2 concentration.
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Keyword(in English) ZnO / Sputtering / Hydrogen / Optical properties / Electrical properties
Paper # CPM2006-41
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Committee CPM
Conference Date 2006/7/31(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of Ga doped ZnO films by RF sputtering in ambient Ar+H_2
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) Sputtering
Keyword(3) Hydrogen
Keyword(4) Optical properties
Keyword(5) Electrical properties
1st Author's Name Kouichi MUTOU
1st Author's Affiliation Faculty of Engineering, Iwate University()
2nd Author's Name Norimitsu NASU
2nd Author's Affiliation Faculty of Engineering, Iwate University
3rd Author's Name Hiroaki HASEBE
3rd Author's Affiliation Faculty of Engineering, Iwate University
4th Author's Name Osamu MICHIKAMI
4th Author's Affiliation Faculty of Engineering, Iwate University
Date 2006-08-07
Paper # CPM2006-41
Volume (vol) vol.106
Number (no) 203
Page pp.pp.-
#Pages 4
Date of Issue