Presentation | 2006-08-07 Growth of Ga doped ZnO films by RF sputtering in ambient Ar+H_2 Kouichi MUTOU, Norimitsu NASU, Hiroaki HASEBE, Osamu MICHIKAMI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We investigate the effect of H_2 concentration and substrate temperature on the surface morphology, crystallinity, electrical properties and optical properties of Ga doped ZnO films deposited on glass substrate by RF magnetron sputtering in ambent Ar+H_2. For H_2 concentration from 0% to 1%, resistivity at RT(ρRT) is 7.58×10^<-4> to 3.79×10^<-4>Ωcm. Transmission is around 90% in spite of H_2 concentration. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ZnO / Sputtering / Hydrogen / Optical properties / Electrical properties |
Paper # | CPM2006-41 |
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Committee | CPM |
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Conference Date | 2006/7/31(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of Ga doped ZnO films by RF sputtering in ambient Ar+H_2 |
Sub Title (in English) | |
Keyword(1) | ZnO |
Keyword(2) | Sputtering |
Keyword(3) | Hydrogen |
Keyword(4) | Optical properties |
Keyword(5) | Electrical properties |
1st Author's Name | Kouichi MUTOU |
1st Author's Affiliation | Faculty of Engineering, Iwate University() |
2nd Author's Name | Norimitsu NASU |
2nd Author's Affiliation | Faculty of Engineering, Iwate University |
3rd Author's Name | Hiroaki HASEBE |
3rd Author's Affiliation | Faculty of Engineering, Iwate University |
4th Author's Name | Osamu MICHIKAMI |
4th Author's Affiliation | Faculty of Engineering, Iwate University |
Date | 2006-08-07 |
Paper # | CPM2006-41 |
Volume (vol) | vol.106 |
Number (no) | 203 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |