Presentation 2006-08-25
Properties of Ultra Thin Flexible Organic Field-Effect Transistor Fabricated on Polyimide Thin Film Substrate
Shigetaka KATORI, Tokutaro KOMATSU, Takashi KURIHARA, Noriyuki SHIMOJI, Kazumi MATSUSHIGE,
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Abstract(in English) We developed ultra thin pentacene field-effect transistor on a polyimide ultra thin base film with a thickness of 6μm, a mobility of 0.02cm^2/Vs and On/Off ratio of 10^4. Polyimde gate dielectric layers cured at 250℃ have been employed to fabricate hi-quality pentacene field-effect transistor. This ultra thin structure achieves to suppress plastic deformation in flexible transistor characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) OFET / Flexible substrate / polyimide
Paper # EMD2006-38,CPM2006-68,OPE2006-80,LQE2006-45
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Committee LQE
Conference Date 2006/8/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Properties of Ultra Thin Flexible Organic Field-Effect Transistor Fabricated on Polyimide Thin Film Substrate
Sub Title (in English)
Keyword(1) OFET
Keyword(2) Flexible substrate
Keyword(3) polyimide
1st Author's Name Shigetaka KATORI
1st Author's Affiliation International Innovation Center, Kyoto University()
2nd Author's Name Tokutaro KOMATSU
2nd Author's Affiliation R&D Center, Hitachi Chemical Co., Ltd.
3rd Author's Name Takashi KURIHARA
3rd Author's Affiliation International Innovation Center, Kyoto University
4th Author's Name Noriyuki SHIMOJI
4th Author's Affiliation New Material Device R&D Center ROHM CO., LTD.
5th Author's Name Kazumi MATSUSHIGE
5th Author's Affiliation International Innovation Center, Kyoto University
Date 2006-08-25
Paper # EMD2006-38,CPM2006-68,OPE2006-80,LQE2006-45
Volume (vol) vol.106
Number (no) 215
Page pp.pp.-
#Pages 3
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