Presentation 2006-08-25
Development of Surface-Wave Enhanced Plasma Apparatus and Application to Semiconductor Processing
Haruki SHOJI, Hisashi FUKUDA, Masakazu FURUKAWA,
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Abstract(in English) We have developed a high-density surface-wave enhanced plasma apparatus for applications to next generation semiconductor fabrication processing. In this study, silicon insulating films deposited below 400℃ were evaluated in the view of the composition and their electronic device application. The silicon nitride films showed the water vapor transmission rate (WVTR) of 0.23g/m^2・day applicable to coating film. The silicon dioxide films indicated low leakage current below 7.5×10^<-9>A to realize near-to-eye microdisplay.
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Keyword(in English) Chemical vapor deposition / Surface-wave plasma / Silicon nitride film / Silicon dioxide film
Paper # EMD2006-37,CPM2006-67,OPE2006-79,LQE2006-44
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Conference Information
Committee LQE
Conference Date 2006/8/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Surface-Wave Enhanced Plasma Apparatus and Application to Semiconductor Processing
Sub Title (in English)
Keyword(1) Chemical vapor deposition
Keyword(2) Surface-wave plasma
Keyword(3) Silicon nitride film
Keyword(4) Silicon dioxide film
1st Author's Name Haruki SHOJI
1st Author's Affiliation Faculty of Engineering, Muroran Institute of Technology()
2nd Author's Name Hisashi FUKUDA
2nd Author's Affiliation Faculty of Engineering, Muroran Institute of Technology
3rd Author's Name Masakazu FURUKAWA
3rd Author's Affiliation Faculty of Engineering, Muroran Institute of Technology
Date 2006-08-25
Paper # EMD2006-37,CPM2006-67,OPE2006-79,LQE2006-44
Volume (vol) vol.106
Number (no) 215
Page pp.pp.-
#Pages 4
Date of Issue