Presentation | 2006-08-25 Development of Surface-Wave Enhanced Plasma Apparatus and Application to Semiconductor Processing Haruki SHOJI, Hisashi FUKUDA, Masakazu FURUKAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed a high-density surface-wave enhanced plasma apparatus for applications to next generation semiconductor fabrication processing. In this study, silicon insulating films deposited below 400℃ were evaluated in the view of the composition and their electronic device application. The silicon nitride films showed the water vapor transmission rate (WVTR) of 0.23g/m^2・day applicable to coating film. The silicon dioxide films indicated low leakage current below 7.5×10^<-9>A to realize near-to-eye microdisplay. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Chemical vapor deposition / Surface-wave plasma / Silicon nitride film / Silicon dioxide film |
Paper # | EMD2006-37,CPM2006-67,OPE2006-79,LQE2006-44 |
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Committee | LQE |
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Conference Date | 2006/8/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Development of Surface-Wave Enhanced Plasma Apparatus and Application to Semiconductor Processing |
Sub Title (in English) | |
Keyword(1) | Chemical vapor deposition |
Keyword(2) | Surface-wave plasma |
Keyword(3) | Silicon nitride film |
Keyword(4) | Silicon dioxide film |
1st Author's Name | Haruki SHOJI |
1st Author's Affiliation | Faculty of Engineering, Muroran Institute of Technology() |
2nd Author's Name | Hisashi FUKUDA |
2nd Author's Affiliation | Faculty of Engineering, Muroran Institute of Technology |
3rd Author's Name | Masakazu FURUKAWA |
3rd Author's Affiliation | Faculty of Engineering, Muroran Institute of Technology |
Date | 2006-08-25 |
Paper # | EMD2006-37,CPM2006-67,OPE2006-79,LQE2006-44 |
Volume (vol) | vol.106 |
Number (no) | 215 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |