| Presentation | 2006/6/26 Terahertz Emission of Radiation Produced by Photoexcited Instability of Two-Dimensional Plasmons in an InGaP/InGaAs/GaAs Heterostructure Transistor(Session 9B Emerging Devices and Technologies III) Mitsuhiro HANABE, Taiichi OTSUJI, Yahya Moubarak MEZIANI, Eiichi SANO, Tanemasa ASANO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We experimentally observed terahertz emission of radiation produced by photoinduced two-dimensional plasmon instability at room temperature from an InGaP/InGaAs/GaAs high-electron-mobility transistor incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively promote the plasma instability, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and the indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency oscillation at 5.0 THz. This indicates the possibility of injection-locked oscillation in the terahertz frequency band. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Terahertz / Plasma Instability / Heterostructure / High-Electron-Mobility Transistor (HEMT) |
| Paper # | ED2006-115,SDM2006-123 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Terahertz Emission of Radiation Produced by Photoexcited Instability of Two-Dimensional Plasmons in an InGaP/InGaAs/GaAs Heterostructure Transistor(Session 9B Emerging Devices and Technologies III) |
| Sub Title (in English) | |
| Keyword(1) | Terahertz |
| Keyword(2) | Plasma Instability |
| Keyword(3) | Heterostructure |
| Keyword(4) | High-Electron-Mobility Transistor (HEMT) |
| 1st Author's Name | Mitsuhiro HANABE |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Taiichi OTSUJI |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Yahya Moubarak MEZIANI |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | Eiichi SANO |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 5th Author's Name | Tanemasa ASANO |
| 5th Author's Affiliation | Graduate School of Information Science and Electrical Engineering, Kyushu University |
| Date | 2006/6/26 |
| Paper # | ED2006-115,SDM2006-123 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |