講演名 | 2006/6/26 Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II) , |
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抄録(和) | |
抄録(英) | A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect-transistors (MOSFETs) alternately, allows current quantization at 20K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed. |
キーワード(和) | |
キーワード(英) | Single-electron / turnstile / MOSFET / accuracy |
資料番号 | ED2006-107,SDM2006-115 |
発行日 |
研究会情報 | |
研究会 | SDM |
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開催期間 | 2006/6/26(から1日開催) |
開催地(和) | |
開催地(英) | |
テーマ(和) | |
テーマ(英) | |
委員長氏名(和) | |
委員長氏名(英) | |
副委員長氏名(和) | |
副委員長氏名(英) | |
幹事氏名(和) | |
幹事氏名(英) | |
幹事補佐氏名(和) | |
幹事補佐氏名(英) |
講演論文情報詳細 | |
申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II) |
サブタイトル(和) | |
キーワード(1)(和/英) | / Single-electron |
第 1 著者 氏名(和/英) | / W. C. Zhang |
第 1 著者 所属(和/英) | NTT Basic Research Laboratories:Institute of Semiconductor, Chinese Academy of Sciences |
発表年月日 | 2006/6/26 |
資料番号 | ED2006-107,SDM2006-115 |
巻番号(vol) | vol.106 |
号番号(no) | 138 |
ページ範囲 | pp.- |
ページ数 | 5 |
発行日 |