Presentation 2006/6/26
Growth and Properties of Semiconductor Nanowires by Selective-Area Metalorganic Vapor Phase Epitaxy(Session 3 Emerging Devices and Technologies I,AWAD2006)
Junichi MOTOHISA, Takashi FUKUI,
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Abstract(in English) We describe our recent results on the formation of III-V semiconductor nanowires and related nanostructures utilizing selective-area metalorganic vapor phase epitaxial (SA-MOVPE) growth. Array of vertically aligned nanowires are grown on partially masked GaAs and InP substrate along the [111] B or [111] A directions, respectively. The alignment and size of the nanowires are controlled by the mask patterning as well as growth conditions. Nanowires containing heterostructures in their radial direction have also been realized by controlling the growth mode during SA-MOVPE. Their optical and transport properties are also investigated and described.
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Keyword(in English) metalorganic vapor phase epitaxy / selective area growth / semiconductor nanowires / heterostructures
Paper # ED2006-69,SDM2006-77
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Committee SDM
Conference Date 2006/6/26(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth and Properties of Semiconductor Nanowires by Selective-Area Metalorganic Vapor Phase Epitaxy(Session 3 Emerging Devices and Technologies I,AWAD2006)
Sub Title (in English)
Keyword(1) metalorganic vapor phase epitaxy
Keyword(2) selective area growth
Keyword(3) semiconductor nanowires
Keyword(4) heterostructures
1st Author's Name Junichi MOTOHISA
1st Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University:Graduate School of Information Science and Technology, Hokkaido University()
2nd Author's Name Takashi FUKUI
2nd Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University:Graduate School of Information Science and Technology, Hokkaido University
Date 2006/6/26
Paper # ED2006-69,SDM2006-77
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 6
Date of Issue