Presentation	2006/6/26 Zinc Oxide : an Attractive Potential substitute for GaN, Applications & Future Prospects(Session 3 Emerging Devices and Technologies I,AWAD2006) Tetsuya Yamamoto,
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Abstract(in English)	Zinc oxide (ZnO) with a band-gap energy of 3.3 eV has the enormous potential for use in optoelectronic applications. It has both cohesion and exciton stability; the very high exciton binding energy of 60 meV gives it a very high potential for room temperature light emission. To develop such optoelectronic devices, one important issue to be resolved is the fabrication of low-resistivity p-type ZnO. ZnO exhibits an asymmetry in its ability to be doped n-type or p-type. As a solution to the doping problem described above, we have proposed a deliberate co-doping of acceptors with reactive donors. We will discuss how to control the valence electrons to realize a low-resistivity p-type wide-band-gap semiconductor, ZnO.
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Paper #	ED2006-68,SDM2006-76
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Committee	SDM
Conference Date	2006/6/26(1days)
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Registration To	Silicon Device and Materials (SDM)
Language	ENG
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Title (in English)	Zinc Oxide : an Attractive Potential substitute for GaN, Applications & Future Prospects(Session 3 Emerging Devices and Technologies I,AWAD2006)
Sub Title (in English)
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1st Author's Name	Tetsuya Yamamoto
1st Author's Affiliation	Materials Design Center, Research Institute, Kochi University of Technology()
Date	2006/6/26
Paper #	ED2006-68,SDM2006-76
Volume (vol)	vol.106
Number (no)	138
Page	pp.pp.-
#Pages	4
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