Presentation | 2006/6/26 Ultrahigh-Speed Integrated Circuits using InP-Based Resonant Tunneling Diodes(Session 2 Compound Semiconductor Devices I,AWAD2006) Koichi MAEZAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Resonant tunneling diodes (RTDs) are attracting much attention because of their potential for high-speed operation as well as for high functionality due to the negative differential resistance (NDR). RTDs are regarded as a most practical quantum effect devices for ultrahigh-speed analog and digital applications in the near future. In this paper we will discuss the InP-based RTD/HEMT integrated circuits for ultrahigh-speed applications. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | resonant tunneling diode / InP / analog-digital converter / logic gate / chaos |
Paper # | ED2006-65,SDM2006-73 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2006/6/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Ultrahigh-Speed Integrated Circuits using InP-Based Resonant Tunneling Diodes(Session 2 Compound Semiconductor Devices I,AWAD2006) |
Sub Title (in English) | |
Keyword(1) | resonant tunneling diode |
Keyword(2) | InP |
Keyword(3) | analog-digital converter |
Keyword(4) | logic gate |
Keyword(5) | chaos |
1st Author's Name | Koichi MAEZAWA |
1st Author's Affiliation | Graduate School of Engineering, Nagoya University() |
Date | 2006/6/26 |
Paper # | ED2006-65,SDM2006-73 |
Volume (vol) | vol.106 |
Number (no) | 138 |
Page | pp.pp.- |
#Pages | 6 |
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