Presentation 2006/6/26
Ultrahigh-Speed Integrated Circuits using InP-Based Resonant Tunneling Diodes(Session 2 Compound Semiconductor Devices I,AWAD2006)
Koichi MAEZAWA,
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Abstract(in English) Resonant tunneling diodes (RTDs) are attracting much attention because of their potential for high-speed operation as well as for high functionality due to the negative differential resistance (NDR). RTDs are regarded as a most practical quantum effect devices for ultrahigh-speed analog and digital applications in the near future. In this paper we will discuss the InP-based RTD/HEMT integrated circuits for ultrahigh-speed applications.
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Keyword(in English) resonant tunneling diode / InP / analog-digital converter / logic gate / chaos
Paper # ED2006-65,SDM2006-73
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ultrahigh-Speed Integrated Circuits using InP-Based Resonant Tunneling Diodes(Session 2 Compound Semiconductor Devices I,AWAD2006)
Sub Title (in English)
Keyword(1) resonant tunneling diode
Keyword(2) InP
Keyword(3) analog-digital converter
Keyword(4) logic gate
Keyword(5) chaos
1st Author's Name Koichi MAEZAWA
1st Author's Affiliation Graduate School of Engineering, Nagoya University()
Date 2006/6/26
Paper # ED2006-65,SDM2006-73
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 6
Date of Issue