| Presentation | 2006/6/26 InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006) Tetsuya SUEMITSU, Masami TOKUMITSU, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | As a review of the InP HEMT technology and its applications to logic ICs, the two-step-recess gate structure, which is now widely used in high-performance InP HEMTs, and its application to optoelectronic ICs are described. This paper also covers the topic of the gate delay analysis that reveals that the parasitic delay becomes the primary cause of the gate delay in sub-100-nm gate regime. For future challenge for logic applications, ways to reduce the off-state transistor current is also discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HEMT / InP / Cutoff frequency / OEIC |
| Paper # | ED2006-64,SDM2006-72 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | HEMT |
| Keyword(2) | InP |
| Keyword(3) | Cutoff frequency |
| Keyword(4) | OEIC |
| 1st Author's Name | Tetsuya SUEMITSU |
| 1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
| 2nd Author's Name | Masami TOKUMITSU |
| 2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| Date | 2006/6/26 |
| Paper # | ED2006-64,SDM2006-72 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |