Presentation 2006/6/26
Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006)
Jae-Eung Oh, Moon-Duk Kim,
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Abstract(in English) High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 15,000 cm2/V-s and 20,000 cm2/v-s can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InAs/AlSb HFET / Molecular Beam Epitaxy / Nano-CMOS / Quantum Dot
Paper # ED2006-63,SDM2006-71
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006)
Sub Title (in English)
Keyword(1) InAs/AlSb HFET
Keyword(2) Molecular Beam Epitaxy
Keyword(3) Nano-CMOS
Keyword(4) Quantum Dot
1st Author's Name Jae-Eung Oh
1st Author's Affiliation School of Electrical and Computer Engineering, Hanyang University()
2nd Author's Name Moon-Duk Kim
2nd Author's Affiliation Department of Physics, Choongnam National University
Date 2006/6/26
Paper # ED2006-63,SDM2006-71
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 6
Date of Issue