Presentation | 2006/6/26 Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006) Jae-Eung Oh, Moon-Duk Kim, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 15,000 cm2/V-s and 20,000 cm2/v-s can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InAs/AlSb HFET / Molecular Beam Epitaxy / Nano-CMOS / Quantum Dot |
Paper # | ED2006-63,SDM2006-71 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2006/6/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006) |
Sub Title (in English) | |
Keyword(1) | InAs/AlSb HFET |
Keyword(2) | Molecular Beam Epitaxy |
Keyword(3) | Nano-CMOS |
Keyword(4) | Quantum Dot |
1st Author's Name | Jae-Eung Oh |
1st Author's Affiliation | School of Electrical and Computer Engineering, Hanyang University() |
2nd Author's Name | Moon-Duk Kim |
2nd Author's Affiliation | Department of Physics, Choongnam National University |
Date | 2006/6/26 |
Paper # | ED2006-63,SDM2006-71 |
Volume (vol) | vol.106 |
Number (no) | 138 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |