| Presentation | 2006/6/26 Progress in SiC Power Semiconductor Devices(Session 2 Compound Semiconductor Devices I,AWAD2006) Takashi SHINOHE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon carbide (SiC) has an electric breakdown field ten times higher than that of silicon (Si) and is expected to be an excellent material for next-generation high-voltage, low-loss power devices. SBDs (Schottky Barrier Diodes) are already being produced commercially and are beginning to be included in switching mode power supplies. Many research organizations and companies are engaged in the research and development of switching devices such as MOSFETs and JFETs (Junction Field Effect Transistors). This paper presents an overview of the present status and future prospects of SiC power semiconductor devices, which are progressing steadily towards practical application. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / Power Semiconductor Devices / SBD / PiN / MOSFET / JFET / Transistor |
| Paper # | ED2006-62,SDM2006-70 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Progress in SiC Power Semiconductor Devices(Session 2 Compound Semiconductor Devices I,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | Power Semiconductor Devices |
| Keyword(3) | SBD |
| Keyword(4) | PiN |
| Keyword(5) | MOSFET |
| Keyword(6) | JFET |
| Keyword(7) | Transistor |
| 1st Author's Name | Takashi SHINOHE |
| 1st Author's Affiliation | Toshiba Corporate R&D Center() |
| Date | 2006/6/26 |
| Paper # | ED2006-62,SDM2006-70 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |