| Presentation | 2006/6/26 Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006) Toshiaki TSUCHIYA, Masao SAKURABA, Junichi MUROTA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently-established low-temperature charge pumping (LTCP) technique is described, which is effective to quantitatively evaluate the interface trap density in nanometer-thick SiGe/Si heterostructures introduced in the channel region of Si MOSFETs. Hot carrier degradation at the hetero-interface is also described. The width of the hot-carrier-damaged hetero-interface region was estimated from experimental measurements by investigating and understanding the low-temperature charge pumping characteristics, and a quantitative estimate of the density of locally-generated hetero-interface traps was made. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFETs / SiGe / heterostructure / hetero-interface trap / charge pumping technique / hot carrier |
| Paper # | ED2006-61,SDM2006-69 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | MOSFETs |
| Keyword(2) | SiGe |
| Keyword(3) | heterostructure |
| Keyword(4) | hetero-interface trap |
| Keyword(5) | charge pumping technique |
| Keyword(6) | hot carrier |
| 1st Author's Name | Toshiaki TSUCHIYA |
| 1st Author's Affiliation | Interdisciplinary Faculty of Science and Engineering, Shimane University() |
| 2nd Author's Name | Masao SAKURABA |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Junichi MUROTA |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| Date | 2006/6/26 |
| Paper # | ED2006-61,SDM2006-69 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |