Presentation 2006/6/26
Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006)
Ki-Heung Park, Jong-Ho Lee,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new MOS device (called modified Saddle MOSFET) with recess channel and side-gate was proposed, and key features of the device were characterized through 3-dimensional device simulation for the first time. The Saddle MOSFET structure was modified to have smaller GIDL and lower source/drain to gate overlap capacitance. It was about 21% lower gate capacitance and lower I_ by two orders of magnitude than Saddle device while keeping nearly same I_ current. In addition, the proposed MOSFETs shown less threshold voltage (V_) sensitivity with the corner shape than conventional recess channel devices, and shown lower gate delay time (CV/I) by~30% than the conventional devices while keeping nearly the same I_.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Saddle MOSFET / side-gate / recess channel / gate-induced-drain-leakage (GIDL) / DRAM
Paper # ED2006-60,SDM2006-68
Date of Issue

Conference Information
Committee SDM
Conference Date 2006/6/26(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006)
Sub Title (in English)
Keyword(1) Saddle MOSFET
Keyword(2) side-gate
Keyword(3) recess channel
Keyword(4) gate-induced-drain-leakage (GIDL)
Keyword(5) DRAM
1st Author's Name Ki-Heung Park
1st Author's Affiliation School of EECS, Kyungpook National University()
2nd Author's Name Jong-Ho Lee
2nd Author's Affiliation School of EECS, Kyungpook National University
Date 2006/6/26
Paper # ED2006-60,SDM2006-68
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 4
Date of Issue