Presentation | 2006/6/26 Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006) Ki-Heung Park, Jong-Ho Lee, |
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PDF Download Page | PDF download Page Link | |
Abstract(in Japanese) | (See Japanese page) | |
Abstract(in English) | A new MOS device (called modified Saddle MOSFET) with recess channel and side-gate was proposed, and key features of the device were characterized through 3-dimensional device simulation for the first time. The Saddle MOSFET structure was modified to have smaller GIDL and lower source/drain to gate overlap capacitance. It was about 21% lower gate capacitance and lower I_) sensitivity with the corner shape than conventional recess channel devices, and shown lower gate delay time (CV/I) by~30% than the conventional devices while keeping nearly the same I_ | |
Keyword(in Japanese) | (See Japanese page) | |
Keyword(in English) | Saddle MOSFET / side-gate / recess channel / gate-induced-drain-leakage (GIDL) / DRAM | |
Paper # | ED2006-60,SDM2006-68 | |
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Conference Information | |
Committee | SDM |
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Conference Date | 2006/6/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006) |
Sub Title (in English) | |
Keyword(1) | Saddle MOSFET |
Keyword(2) | side-gate |
Keyword(3) | recess channel |
Keyword(4) | gate-induced-drain-leakage (GIDL) |
Keyword(5) | DRAM |
1st Author's Name | Ki-Heung Park |
1st Author's Affiliation | School of EECS, Kyungpook National University() |
2nd Author's Name | Jong-Ho Lee |
2nd Author's Affiliation | School of EECS, Kyungpook National University |
Date | 2006/6/26 |
Paper # | ED2006-60,SDM2006-68 |
Volume (vol) | vol.106 |
Number (no) | 138 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |