Presentation 2006/6/26
Device and Substrate Technologies for Advanced CMOS with Mobility Enhancement(Session 1 Silicon Devices I,AWAD2006)
Shin-ichi TAKAGI, Tsutomu TEZUKA, Toshifumi IRISAWA, Shu NAKAHARAI, Toshinori NUMATA, Naoharu SUGIYAMA,
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Abstract(in English) Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on the development of mobility-enhanced device structures using strained-Si/SiGe/Ge MOS channels and the carrier transport properties in those channels.
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Keyword(in English) CMOS / Mobility / strained Si / SiGe / Ge / strain
Paper # ED2006-59,SDM2006-67
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Device and Substrate Technologies for Advanced CMOS with Mobility Enhancement(Session 1 Silicon Devices I,AWAD2006)
Sub Title (in English)
Keyword(1) CMOS
Keyword(2) Mobility
Keyword(3) strained Si
Keyword(4) SiGe
Keyword(5) Ge
Keyword(6) strain
1st Author's Name Shin-ichi TAKAGI
1st Author's Affiliation MIRAI-AIST:The University of Tokyo()
2nd Author's Name Tsutomu TEZUKA
2nd Author's Affiliation MIRAI-ASET
3rd Author's Name Toshifumi IRISAWA
3rd Author's Affiliation MIRAI-ASET
4th Author's Name Shu NAKAHARAI
4th Author's Affiliation MIRAI-ASET
5th Author's Name Toshinori NUMATA
5th Author's Affiliation MIRAI-ASET
6th Author's Name Naoharu SUGIYAMA
6th Author's Affiliation MIRAI-ASET
Date 2006/6/26
Paper # ED2006-59,SDM2006-67
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 6
Date of Issue