| Presentation | 2006/6/26 High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006) Gitae Jeong, Kinam Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | PRAM integration technologies using 3-D cell array transistor were proposed to realize the reliable high density 256Mb PRAM (Phase Change RAM) product. Introducing the 3-D cell array transistor, sufficient programming current with the good scalability and reliability was obtained. The cost effectiveness, reliability and performance in the product level will be reviewed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PRAM / 3-D transistor / Cost Effectiveness / Reliability |
| Paper # | ED2006-58,SDM2006-66 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | PRAM |
| Keyword(2) | 3-D transistor |
| Keyword(3) | Cost Effectiveness |
| Keyword(4) | Reliability |
| 1st Author's Name | Gitae Jeong |
| 1st Author's Affiliation | Advanced Technology Development 2, Memory Device Business, Samsung Electronics Co.() |
| 2nd Author's Name | Kinam Kim |
| 2nd Author's Affiliation | Advanced Technology Development 2, Memory Device Business, Samsung Electronics Co. |
| Date | 2006/6/26 |
| Paper # | ED2006-58,SDM2006-66 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |