Presentation 2006-07-28
A Smart Temperature Sensor with Subthreshold CMOS Circuits
Ken UENO, Tetsuya HIROSE, Tetsuya ASAI, Yoshihito AMEMIYA,
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Abstract(in English) We propose a smart temperature sensor using subthreshold CMOS circuits. The subthreshold current of MOSFET changes exponentially with temperature, and is an ultralow-power operation because of its nano-ampere order current. By using this characteristics, the temperature sensor circuit can be constructed with ultralow-power consumption. In this work, we developed the sensor circuit, and its operation principle was verified through SPICE simulation. The power consumption was only 6μW or less.
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Keyword(in English) CMOS / Temperature sensor / PTAT current / Subthreshold region / Ultralow-power
Paper # ICD2006-71
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Conference Date 2006/7/20(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Smart Temperature Sensor with Subthreshold CMOS Circuits
Sub Title (in English)
Keyword(1) CMOS
Keyword(2) Temperature sensor
Keyword(3) PTAT current
Keyword(4) Subthreshold region
Keyword(5) Ultralow-power
1st Author's Name Ken UENO
1st Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University()
2nd Author's Name Tetsuya HIROSE
2nd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
3rd Author's Name Tetsuya ASAI
3rd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
4th Author's Name Yoshihito AMEMIYA
4th Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
Date 2006-07-28
Paper # ICD2006-71
Volume (vol) vol.106
Number (no) 189
Page pp.pp.-
#Pages 5
Date of Issue