Presentation 2006/6/29
Study of thermal oxidation on Al thin film of spin tunneling junctions
Masahiro MORIZUMI, Kazuo SHIIKI,
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Abstract(in English) In this research thermal oxidation has pointed for making method of insulator AlO_x. Composition of insulator AlO_x was analyzed by XPS. Electric characteristics of spin tunneling junctions which have insulator AlO_x fabricated by thermal oxidation was investigated. From XPS, the composition of AlO_x has changed AlO_2 to Al_2O_3 when oxidize temperature is high. From the value of relative dielectric constants, also support that high temperature oxidation brings value of relative dielectric constants to bulk Al_2O_3 especially by 473K oxidation. Resistance, barrier height and breakdown voltage increases. This is because high temperature oxidation makes uniformity insulator and less defects.
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Keyword(in English) Spin tunneling junction / Thermal oxidation / AlO_x / XPS / Breakdown
Paper # MR2006-17
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Committee MR
Conference Date 2006/6/29(1days)
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Registration To Magnetic Recording (MR)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study of thermal oxidation on Al thin film of spin tunneling junctions
Sub Title (in English)
Keyword(1) Spin tunneling junction
Keyword(2) Thermal oxidation
Keyword(3) AlO_x
Keyword(4) XPS
Keyword(5) Breakdown
1st Author's Name Masahiro MORIZUMI
1st Author's Affiliation Department of Applied Physics and Physicθinformatics, Keio University()
2nd Author's Name Kazuo SHIIKI
2nd Author's Affiliation Department of Applied Physics and Physicθinformatics, Keio University
Date 2006/6/29
Paper # MR2006-17
Volume (vol) vol.106
Number (no) 142
Page pp.pp.-
#Pages 6
Date of Issue