Presentation | 2006/6/29 Study of thermal oxidation on Al thin film of spin tunneling junctions Masahiro MORIZUMI, Kazuo SHIIKI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this research thermal oxidation has pointed for making method of insulator AlO_x. Composition of insulator AlO_x was analyzed by XPS. Electric characteristics of spin tunneling junctions which have insulator AlO_x fabricated by thermal oxidation was investigated. From XPS, the composition of AlO_x has changed AlO_2 to Al_2O_3 when oxidize temperature is high. From the value of relative dielectric constants, also support that high temperature oxidation brings value of relative dielectric constants to bulk Al_2O_3 especially by 473K oxidation. Resistance, barrier height and breakdown voltage increases. This is because high temperature oxidation makes uniformity insulator and less defects. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Spin tunneling junction / Thermal oxidation / AlO_x / XPS / Breakdown |
Paper # | MR2006-17 |
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Conference Information | |
Committee | MR |
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Conference Date | 2006/6/29(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Magnetic Recording (MR) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Study of thermal oxidation on Al thin film of spin tunneling junctions |
Sub Title (in English) | |
Keyword(1) | Spin tunneling junction |
Keyword(2) | Thermal oxidation |
Keyword(3) | AlO_x |
Keyword(4) | XPS |
Keyword(5) | Breakdown |
1st Author's Name | Masahiro MORIZUMI |
1st Author's Affiliation | Department of Applied Physics and Physicθinformatics, Keio University() |
2nd Author's Name | Kazuo SHIIKI |
2nd Author's Affiliation | Department of Applied Physics and Physicθinformatics, Keio University |
Date | 2006/6/29 |
Paper # | MR2006-17 |
Volume (vol) | vol.106 |
Number (no) | 142 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |